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Ferroelectric SrBi2Ta2O9 single-crystal growth and characterization

Published online by Cambridge University Press:  31 January 2011

B. Sih ,
J. Tang ,
M. Dong  and
Z-G. Ye
B. Sih
Affiliation:
Department of Chemistry, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
J. Tang
Affiliation:
Department of Chemistry, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
M. Dong
Affiliation:
Department of Chemistry, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
Z-G. Ye*
Affiliation:
Department of Chemistry, Simon Fraser University, Burnaby, BC, Canada V5A 1S6
*
a)Address all correspondence to this author. e-mial: zye@sfu.ca
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Abstract

Using a new composite flux and an improved growth process, large and high-quality ferroelectric SrBi2Ta2O9 (SBT) single crystals (up to 25 × 20 mm2 area) were successfully grown from high-temperature solutions. The effects of chemical, thermodynamic, and kinetic parameters on the growth results were systematically studied. The optimum system for the growth of SBT crystals has been identified. B2O3 additive was shown to play an important role in improving the effectiveness of the Bi2O3 solvent. The grown SBT single crystals exhibit a dominant (001)-orientation and large single-domain areas. The dielectric and ferroelectric properties measured in relation to crystal orientations have confirmed the absence of any polarization component normal to the (Bi2O2)2+ sheets of the structure, indicating a high anisotropy in the properties.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 6 , June 2001 , pp. 1726 - 1733
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1.Aucellio, O., Scott, J.F., and Ramesh, R., Phys. Today 51, 22 (1998).CrossRefGoogle Scholar
2.Desu, S.B. and Vijay, D.P., Mater. Sci. Eng. B 32, 75 (1995).CrossRefGoogle Scholar
3.Chen, T.C., Thio, C.L., and Desu, S.B., J. Mater. Res. 12, 2628 (1997).Google Scholar
4.Nagata, M., Vijay, D.P., Zhang, X., and Desu, S.B., Phys. Status Solidi A 157, 75 (1996).CrossRefGoogle Scholar
5.Paz de Araujo, C.P., Cuchiaro, J.D., McMillan, L.D., Scott, M.C., and Scott, J.F., Nature 374, 627 (1995).CrossRefGoogle Scholar
6.Amanuma, K., Hase, T., and Miyasaka, Y., Appl. Phys. Lett. 66, 221 (1995).Google Scholar
7.Yoo, I.K. and Desu, S.B., Phys. Status Solidi A 133, 565 (1996).CrossRefGoogle Scholar
8.Al-Shareef, H.N., Dimos, D., Boyle, T.J., Warren, W.L., and Tuttle, B.A., Appl. Phys. Lett. 68, 90 (1996).Google Scholar
9.Warren, W.L., Dimos, D., Tuttle, B.A., Nasby, R.D., and Pike, G.E., Appl. Phys. Lett. 65, 1018 (1994).CrossRefGoogle Scholar
10.Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Imumi, F., Appl. Phys. Lett. 74, 1904 (1999).CrossRefGoogle Scholar
11.Moon, S.E., Back, S.B., Kwun, S-I., Song, T.K., and Yoon, J-G., in Proceedings of the 12th IEEE International Symposium on the Applications of Ferroelectrics (ISAF-2000) (Institute of Electrical and Electronics Engineering, New York) (in press).Google Scholar
12.Nagasawa, N., Amachida, A., Ami, T., and Suzuki, M., J. Ceram. Soc. Jpn. 106, 477 (1998).Google Scholar
13.Suzuki, M., Nagasawa, N., Machida, A., and Ami, T., Jpn. J. Appl. Phys. 35, L564 (1996).CrossRefGoogle Scholar
14.Elwell, D. and Sheel, H.J., in Crystal Growth from High Temperature Solution (Academic Press, New York, 1975), Chap. 3.Google Scholar
15.Ye, Z-G. and Schmid, H., J. Cryst. Growth 167, 628 (1996).CrossRefGoogle Scholar
16.Ye, Z-G., Sih, B., and Dong, M. (unpublished).Google Scholar
17.Onodera, A., Yoshio, K., Myint, C.C., Kojima, S., Yamashita, H., and Takama, T., Jpn. J. Appl. Phys. 38, 5683 (1999).Google Scholar
18.Ishikawa, K. and Funakubo, H., Appl. Phys. Lett. 75, 1970 (1999).CrossRefGoogle Scholar