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Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition

Published online by Cambridge University Press:  05 October 2020

Jae Hur Open the ORCID record for Jae Hur [Opens in a new window] ,
Panni Wang Open the ORCID record for Panni Wang [Opens in a new window] ,
Nujhat Tasneem ,
Zheng Wang ,
Asif Islam Khan  and
Shimeng Yu
Jae Hur
Affiliation:
School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, USA
Panni Wang
Affiliation:
School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, USA
Nujhat Tasneem
Affiliation:
School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, USA
Zheng Wang
Affiliation:
School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, USA
Asif Islam Khan*
Affiliation:
School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, USA
Shimeng Yu*
Affiliation:
School of Electrical and Computing Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, USA
*
a)Address all correspondence to these authors. e-mail: asif.khan@ece.gatech.edu
b)e-mail: shimeng.yu@ece.gatech.edu
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Abstract

The doped/alloyed HfO2 and ZrO2 thin films revolutionized not only the field of ferroelectric physics but also various ranges of device applications. Especially when the two oxides are combined in an 1:1 ratio, the ferroelectric polarization of the material became the most distinctive. Many researchers have investigated various different process conditions such as controlling Hf0.5Zr0.5O2 (HZO) film thickness and modifying different metal electrodes. Here, we explored the effect of additional Ar plasma treatment to the HZO film. The additional Ar plasma was exposed to the plasma-enhanced atomic layer deposition (PEALD) HZO for this study. Then, the sample was compared with a conventional PEALD and thermal ALD HZO films. By understanding the polarization–electric field (P–E), current–electric field (I–E), and electrical breakdown characteristics of the different samples, it was found that the Ar plasma treatment can control the degree of ferroelectric and antiferroelectric phases of HZO film.

Keywords

atomic layer depositionferroelectricphase transformation
Type
Article
Information
Journal of Materials Research , First View , pp. 1 - 8
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Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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