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Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire

  • Kook Hyun Choi (a1), Hyeong Joon (a1), Su Jin Chung (a1), Jin Yong Kim (a2), Tae Kun Lee (a3) and Young Jin Kim (a4)...


Surface acoustic wave (SAW) propagation properties of gallium nitride (GaN) epitaxial layers on sapphire were theoretically and experimentally characterized. GaN thin films were grown on a c-plane sapphire substrate using a metalorganic chemical vapor deposition system. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer structures, while SAW velocities were calculated by matrix methods. Experimentally, we found pseudo-SAW and high-velocity pseudo-SAW modes in the GaN/sapphire structure, which had a good agreement with calculated velocities.



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