Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-21T11:43:22.933Z Has data issue: false hasContentIssue false
  • English
  • Français

Excimer laser-assisted etching of polysilicon at 193 nm

Published online by Cambridge University Press:  31 January 2011

M. D. Armacost ,
S. V. Babu ,
S. V. Nguyen  and
J. F. Rembetski
M. D. Armacost
Affiliation:
Becton-Dickinson Vacutainer Systems, Rutherford, New Jersey 07070
S. V. Babu
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13676
S. V. Nguyen
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
J. F. Rembetski
Affiliation:
IBM General Technology Division, Essex Junction, Vermont 05452
Get access

Abstract

Excimer laser-assisted etching of polysilicon at 193 nm was studied in the presence of CF3Br, CF2Cl2, and NF3. In the presence of 193 nm radiation, CF3Br showed some propensity to etch polysilicon, while CF2Cl2 did not show any appreciable etching. In the presence of NF3, maximum etch rates of 0.6 Å/pulse were obtained for pressures greater than 500 Torr and fluences exceeding 200 mJ/(cm2 pulse). The etch rate increased with both fluences and pressure to a limiting value of 0.6 Å/pulse. An adsorptive etch mechanism was proposed, where NF3 molecules diffuse to the surface, adsorb, and then react after absorbing laser radiation. Thermal effects enhance this process and appear to dominate at lower pressures (<400 Torr) and higher fluences. Etching caused by the gas phase formation of F atoms is minimal due to the low absorption cross section of NF3 at 193 nm. Etching of submicron profiles in polysilicon was also examined. Polysilicon samples masked by patterned SiO2 were exposed to NF3 and 193 nm ArF radiation. Subsequent scanning electron microscopy (SEM) analysis demonstrated directional etching with some surface roughening.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 6 , December 1987 , pp. 895 - 901
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Jain, K.Laser Appl. 2 (9), 49 (1983).Google Scholar
2Brewer, P. D.Reksten, G. M. and Osgood, R. M. Jr. , Solid State Technol. 28 (4), 273 (1985).Google Scholar
3Ehrlich, D. J.Tsao, J. Y. and Buzler, C. O.J. Vac. Sci. Technol. B 3, 1 (1983).Google Scholar
4Arikado, T.Sekine, M.Okano, H. and Horiike, Y.Mater. Res. Soc. Symp. Proc. 29, 167 (1984).CrossRefGoogle Scholar
5Hirose, M.Yokoyama, S. and Yamakage, Y.J. Vac. Sci. Technol. B 3, 1445 (1985).CrossRefGoogle Scholar
6Armacost, M. D. M. S. thesis Clarkson University, 1986.CrossRefGoogle Scholar
7Armacost, M. D.Babu, S. V.Nguyen, S. V. and Rembetski, J. F. in Science and Technology of Microfabrication, edited by Howard, R. E.Hu, E. L.Namba, S. and Pang, S. (Materials Research Society, Pittsburgh, PA, 1987), Vol. 76, p. 147.Google Scholar
8Bromberg, J. P.Physical Chemistry, (Allyn and Bacon, Boston, MA, 1980).Google Scholar
9Handbook of Chemistry and Physics (Chemical Rubber Company, Boca Raton, FL, 1979), 60th ed.Google Scholar
10Houle, F. A. IBM Research Report, January 1983.Google Scholar
11Houle, P. A.Mater. Res. Soc. Symp. Proc. 29, 203 (1984).CrossRefGoogle Scholar
12Chuang, T. J.J. Vac. Sci. Technol. 21, 798 (1982).CrossRefGoogle Scholar
13Aveyard, R. and Haydon, D. A.An Introduction to Principles of Surface Chemistry (Cambridge U.P., London, 1973).Google Scholar
14Walas, S. M.Phase Equilibria in Chemical Engineering (Butter-worth, Boston, MA, 1985).Google Scholar