Skip to main content Accessibility help
×
Home

Etching of polycrystalline diamond films by electron beam assisted plasma

  • Koji Kobashi (a1), Shigeaki Miyauchi (a1), Koichi Miyata (a1), Kozo Nishimura (a1) and Jorge J. Rocca (a2)...

Abstract

Polycrystalline diamond films were processed in a direct current plasma produced by a self-focused electron beam using combinations of H2, O2, and He as the processing gas. The film surfaces were observed by scanning electron microscopy, and characterized by x-ray photoelectron spectroscopy. It was found that for the case in which O2 was included in the processing gas, a high density of etch pits appeared on (100) faces of diamond grains, and oxygen was either physisorbed or chemisorbed at the film surface. It was demonstrated that the etching apparatus used was capable of forming at least a 5-μm wide pattern of polycrystalline diamond film.

Copyright

References

Hide All
1.Johnson, C. E., Hasting, M. A. S., and Weimer, W. A., J. Mater. Res. 5, 2320 (1990).
2.Nimmagadda, R. R., Joshi, A., and Hsu, W. L., J. Mater. Res. 5, 2445 (1990).
3.Tankala, K., DebRoy, T., and Alan, M., J. Mater. Res. 5, 2483 (1990).
4.Plano, L., Yokota, S., and Ravi, K. V., Proc. Electrochem. Soc. 89–12, 380 (1989).
5.Uchida, N., Kurita, T., Ohkishi, H., Uematsu, K., and Saito, K., J. Cryst. Growth 114, 565 (1991).
6.Uchida, N., Kurita, T., Uematsu, K., and Saito, K., J. Mater. Sci. Lett. 9, 249 (1990).
7.Uchida, N., Kurita, T., Uematsu, K., and Saito, K., J. Mater. Sci. Lett. 9, 251 (1990).
8.Sandhu, G. S. and Chu, W. K., Appl. Phys. Lett. 55, 437 (1989).
9.Joshi, A. and Nimmagadda, R., J. Mater. Res. 6, 1484 (1991).
10.Kobayashi, K., Mutsukura, N., and Machi, Y., Thin Solid Films 200, 139 (1991).
11.Dorsch, O., Holzner, K., Werner, M., Obermeier, E., Harper, R. E., Johnson, C., Chalker, P. R., and Buckley-Golder, I. M., Diamond and Related Mater. 2, 1096 (1993).
12.Landstrass, M. I., Plano, M. A., Moreno, M. A., McWilliams, S., Pan, L. S., Kania, D. R., and Han, S., Diamond and Related Mater. 2, 1033 (1993).
13.Sato, Y. and Kamo, M., Surf. Coat. Technol. 39–40, 183 (1989).
14.Ramesham, R. and Loo, B. H., J. Electrochem. Soc. 139, 1988 (1992);
Errata, J. Electrochem. Soc. 139, 2874 (1992).
15.Grot, S. A., Ditizio, R. A., Gildenblat, G. Sh., Badzian, A. R., and Fonash, S. J., Appl. Phys. Lett. 61, 2326 (1992).
16.Grot, S. A., Gildenblat, G. Sh., and Badzian, A. R., IEEE Electron Device Lett. 13, 462 (1992).
17.Pearton, S. J., Katz, A., Rein, F., and Lothian, J. R., Electron. Lett. 28, 822 (1992).
18.Efremow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A., and Economou, N. P., J. Vac. Sci. Technol. B 3, 416 (1985).
19.Rothschild, M., Arnone, C., and Ehrlich, D. J., J. Vac. Sci. Technol. B 4, 310 (1986).
20.Johnson, C., Chalker, P. R., Buckley-Golder, I. M., Marsden, P. J., and Williams, S. W., Diamond and Related Mater. 2, 829 (1993).
21.Moore, C. A., Rocca, J. J., Johonson, T., Collins, G. J., and Russell, P. E., Appl. Phys. Lett. 43, 290 (1983).
22.Thompson, T. R., Rocco, J. J., Emery, K., Boyer, P. K., Collins, G. J., Appl. Phys. Lett. 43, 777 (1983).
23.Rocco, J. J., Meyer, J. W., Farrell, M. R., and Collins, G. J., J. Appl. Phys. 56, 790 (1984).
24.Kobashi, K., Nishimura, K., Kawate, Y., and Horiuchi, T., Phys. Rev. B 38, 4067 (1988).
25. U.S. patent 4 940 015.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed