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Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

  • Zakhary F. Krasilnik (a1), Boris A. Andreev (a1), Denis I. Kryzhkov (a1), Ludmila V. Krasilnikova (a1), Viktor P. Kuznetsov (a1), Dmitry Yu. Remizov (a1), Viacheslav B. Shmagin (a1), Margarita V. Stepikhova (a1), Artem N. Yablonskiy (a1), Tom Gregorkievicz (a2), Nguyen Q. Vinh (a2), Wolfgang Jantsch (a3), Hanka Przybylinska (a4), Victor Yu. Timoshenko (a5) and Denis M. Zhigunov (a5)...

Abstract

The paper is a brief retrospective review of our contribution to the Si:Er problem in the last decade. It contains a description of the experimental facilities, results of the light-emitting media (Si:Er and Si1−xGex:Er) research, and device applications.

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Corresponding author

a) Address all correspondence to this author. e-mail: yablonsk@ipm.sci-nnov.ru This paper was selected as the Outstanding Meeting Paper for the 2005 MRS Spring Meeting Symposium V Proceedings, Vol. 866.

References

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Keywords

Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

  • Zakhary F. Krasilnik (a1), Boris A. Andreev (a1), Denis I. Kryzhkov (a1), Ludmila V. Krasilnikova (a1), Viktor P. Kuznetsov (a1), Dmitry Yu. Remizov (a1), Viacheslav B. Shmagin (a1), Margarita V. Stepikhova (a1), Artem N. Yablonskiy (a1), Tom Gregorkievicz (a2), Nguyen Q. Vinh (a2), Wolfgang Jantsch (a3), Hanka Przybylinska (a4), Victor Yu. Timoshenko (a5) and Denis M. Zhigunov (a5)...

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