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Epitaxial thin films of PbTiO3/SnO2 heterostructures on sapphire

Published online by Cambridge University Press:  03 March 2011

H.L.M. Chang ,
H. Zhang ,
Z. Shen  and
Q. Wang
H.L.M. Chang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
H. Zhang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
Z. Shen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
Q. Wang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
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Abstract

Epitaxial films of single-layer SnO2 and PbTiO3/SnO2 heterostructures were obtained on (0001) sapphire (α-Al2O3) substrates by metal-organic chemical vapor deposition. X-ray diffraction and transmission electron microscopy were used to characterize the structural properties of these films. The epitaxial relationship for the heterostructure PbTiO3/SnO2/sapphire was found to be (111) [011]PbTiO3 ‖ (100) [001]SnO2 ‖ (0001) [1100]α-Al2O3. The fact that epitaxial ferroelectric films were obtainable in such a structurally highly heterogeneous system suggests that a wide range of material selection is possible in exploring the kind of applications that need to utilize epitaxial ferroelectric films in a multilayered heterostructure.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3108 - 3112
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Swartz, S. L. and Woods, V. E., Condens. Matter News 1, 4 (1992).Google Scholar
2Francombe, M. H. and Krishnaswamy, S. V., J. Vac. Sci. Technol. A8, 1382 (1990).CrossRefGoogle Scholar
3Venkatesan, T., Thin Solid Films 216, 52 (1992).CrossRefGoogle Scholar
4Ramesh, R., Inam, A., Wilkens, B., Chan, W. K., Sands, T., Tarascon, J. M., Fork, D. K., Geballe, T. H., Evans, J., and Bullington, J., Appl. Phys. Lett. 59, 1782 (1991).CrossRefGoogle Scholar
5Ramesh, R., Chan, W. K., Wilkens, B., Gilchrist, H., Sands, T., Tarascon, J. M., Keramidas, V. G., Fork, D. K., Lee, J., and Safari, A., Appl. Phys. Lett. 61, 1537 (1992).CrossRefGoogle Scholar
6Eom, C. B., Cava, R. J., Fleming, R. M., Phillips, J. M., van Dover, R. B., Marshall, J. H., Hsu, J. W. P., Krajewski, J. J., and Peck, W. F. Jr., Science 258, 1766 (1992).CrossRefGoogle Scholar
7Cheung, J. T., Morgan, P. E. D., Lowndes, D. H., Zheng, Z-Y., and Breen, J., Appl. Phys. Lett. 62, 2045 (1993).CrossRefGoogle Scholar
8Chang, H. L. M., You, H., Guo, J., and Lam, D. J., Appl. Surf. Sci. 48/49, 12 (1991).CrossRefGoogle Scholar
9Chang, H. L. M., You, H., Gao, Y., Guo, J., Foster, CM., Chiarello, R. P., Zhang, T. J., and Lam, D. J., J. Mater. Res. 7, 2495 (1992).CrossRefGoogle Scholar
10Chopra, K. L., Major, S., and Pandya, D. K., Thin Solid Films 102, 1 (1983).CrossRefGoogle Scholar
11Chang, H. L. M., Zhang, T. J., Zhang, H., Guo, J., Kim, H. K., and Lam, D. J., J. Mater. Res. 8, 2634 (1993).CrossRefGoogle Scholar
12Guo, J., Chang, H. L. M., and Lam, D. J., Appl. Phys. Lett. 61, 3116 (1992).CrossRefGoogle Scholar
13Bai, G. R., Chang, H. L. M., Foster, C. M., Shen, Z., and Lam, D. J., J. Mater. Res. 9, 156 (1994).CrossRefGoogle Scholar