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Epitaxial growth of SrTiO3 (00h), (0hh), and (hhh) thin films on buffered Si(001)

Published online by Cambridge University Press:  31 January 2011

F. Sáanchez ,
R. Aguiar ,
V. Trtik ,
C. Guerrero ,
C. Ferrater  and
M. Varela
F. Sáanchez
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Spain
R. Aguiar
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Spain
V. Trtik
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Spain
C. Guerrero
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Spain
C. Ferrater
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Spain
M. Varela
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Spain
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Abstract

Epitaxial SrTiO3(STO) thin films have been grown successfully on Si(001) buffered with single and double buffer layers by pulsed laser deposition. Depending on the buffer structure and under appropriate substrate temperature and oxygen pressure values, epitaxial films are grown with single orientations. Epitaxial STO films with (0hh), (00h), and (hhh) out-of-plane orientation have been obtained for the first time on yttria-stabilized zirconia (YSZ)ySi(001), CeO2/YSZ/Si(001), and TiN/YSZ/Si(001), respectively. Secondary ion mass spectrometry analyses show sharp interfaces and good uniformity of the elements in each layer. The films are practically free of droplets, and the rms value of roughness is smaller than 0.5 nm.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 6 , June 1998 , pp. 1422 - 1425
Copyright
Copyright © Materials Research Society 1998

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References

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