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Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation

  • Xin Jia (a1), Jun-jun Wei (a1), Yabo Huang (a1), Siwu Shao (a1), Kang An (a1), Yuechan Kong (a2), Lishu Wu (a2), Zhina Qi (a1), Jinlong Liu (a1), Liangxian Chen (a1) and Chengming Li (a1)...


The development of GaN-on-diamond devices offers bright prospects for the creation of high-power density electronics. This article presents a process of fabricating GaN-on-diamond structure by depositing diamond films on dual sides, including heat dissipation diamond film and sacrificial carrier diamond film. Prior to heat dissipation diamond film layer preparation, aluminum nitride (AlN) is chosen as a dielectric layer and pretreated by nanodiamond (ND) particles, to enhance the nucleation density. Zeta potential measurements and X-ray photoelectron spectroscopy are used to analyze the AlN surface after each treatment. The results show that oxygen-terminated ND particles tend to adhere to an AlN surface because the oxygen-terminated NDs have –COOH and –OH groups, and hold a negative potential. On the contrary, fluorine-terminated AlN prefers to attract the hydrogen-terminated ND seeds, which resulted in higher diamond nucleation density. Based on this preliminary study, a dense high-quality GaN-on-diamond wafer is successfully produced by using AlN as the dielectric layer and a diamond film as the sacrificial carrier.


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1.Sun, H., Simon, R.B., Pomeroy, J.W., Francis, D., Faili, F., Twitchen, D.J., Kuball, M.: Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications. Appl. Phys. Lett. 106, 111906 (2015).
2.Liu, D., Francis, D., Faili, F., Middleton, C., Anaya, J., Pomeroy, J. W., Twitchen, D. J., Kuball, M.: Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices. Scr. Mater. 128, 5760 (2017).
3.Yates, L., Anderson, J., Gu, X., Lee, G., Bai, T., Mecklenburg, M., Aoki, T., Goorsky, M.S., Kuball, M., Piner, E. L., Graham:, S.Low thermal boundary resistance interfaces for GaN-on-diamond devices. ACS Appl. Mater. Interfaces 10, 2430224309 (2018).
4.Jia, X., Wei, J., Kong, Y., Li, C., Liu, J., Chen, L., Sun, F., Wang, X.: The influence of dielectric layer on the thermal boundary resistance of GaN-on-diamond substrate. Surf. Interface Anal. 51, 783790 (2019).
5.Zhou, Y., Anaya, J., Pomeroy, J., Sun, H., Gu, X., Xie, A., Beam, E., Becker, M., Grotjohn, T.A., Lee, C., Kuball, M.: Barrier-layer optimization for enhanced GaN-on-diamond device cooling. ACS Appl. Mater. Interfaces 9, 3441634422 (2017).
6.Cui, J.B., Ma, Y.R., Zhang, J.F., Chen, H., Fang, R.C.: Growth and characterization of diamond film on aluminum nitride. Mater. Res. Bull. 31, 781785 (1996).
7.Wang, W.L., Zhang, R.Q., Liao, K.J., Sun, Y.W., Wang, B.B.: Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition. Diamond Relat. Mater. 9, 16601663 (2000).
8.Cervenka, J., Lau, D.W.M., Dontschuk, N., Shimoni, O., Silvestri, L., Ladouceur, F., Duvall, S.G., Prawer, S.: Nucleation and chemical vapor deposition growth of polycrystalline diamond on aluminum nitride: Role of surface termination and polarity. Cryst. Growth Des. 13, 34903497 (2013).
9.Hees, J., Heidrich, N., Pletschen, W., Sah, R.E., Wolfer, M, Williams, O A., Lebedey, V., Nebel, C E., Ambacher, O.: Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films. Nanotechnology 24, 025601 (2012).
10.Wang, T., Handschuh-Wang, S., Zhang, S., Zhou, X., Tang, Y.: Enhanced nucleation of diamond on three dimensional tools via stabilized colloidal nanodiamond in electrostatic self-assembly seeding process. J. Colloid Interface Sci. 506, 543552 (2017).
11.Pobedinskas, P., Degutis, G., Dexters, W., Janssen, W., Janssens, S.D., Coningss, B., Ruttens, B., D’haen, J., Boyen, H. G., Hardy, A., Van bael, M.K., Haenen, K.: Surface plasma pretreatment for enhanced diamond nucleation on AlN. Appl. Phys. Lett. 102, 201609 (2013).
12.Yoshikawa, T., Reusch, M., Zuerbig, V., Cimalla, V., Lee, K. H., Kurzyp, M., Arnault, J. C, Nebel, C.E., Ambacher, O., Lebedev, V.: Electrostatic self-assembly of diamond nanoparticles onto Al- and N-polar sputtered aluminum nitride surfaces. Nanomaterials 6, 217 (2016).
13.Kulakova, I.I.: Surface chemistry of nanodiamonds. Phys. Solid State 46, 636643 (2004).
14.Kathi, J. and Rhee, K.Y.: Surface modification of multi-walled carbon nanotubes using 3-aminopropyltriethoxysilane. J. Mater. Sci. 43, 3337 (2008).
15.Ji, S., Jiang, T., Xu, K., Li, S.: FTIR study of the adsorption of water on ultradispersed diamond powder surface. Appl. Surf. Sci. 133, 231238 (1998).
16.Liu, X., Yu, T., Wei, Q., Yu, Z., Xu, X.: Enhanced diamond nucleation on copper substrates by employing an electrostatic self-assembly seeding process with modified nanodiamond particles. Colloids Surf., A 412, 8289 (2012).
17.Xu, X., Yu, Z., Zhu, Y., Wang, B.: Effect of sodium oleate adsorption on the colloidal stability and zeta potential of detonation synthesized diamond particles in aqueous solutions. Diamond Relat. Mater. 14, 206212 (2005).
18.Williams, O.A., Hees, J., Dieker, C., Jager, W., Kirste, L., Nebel, C. E.: Size-dependent reactivity of diamond nanoparticles. ACS Nano 4, 48244830 (2010).
19.Mandal, S., Thomas, E.L.H., Middleton, C., Gines, L., Griffiths, O T., Kappers, M J., Oliver, R A., Wallis, D J., Goff, L E., Lynch, S A., Kuball, M., Williams, O A.: Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega 2, 72757280 (2017).
20.Slack, G.A., Tanzilli, R.A., Pohl, R.O., Vandersande, J.W.: The intrinsic thermal conductivity of AIN. J. Phys. Chem. Solids 48, 641647 (1987).
21.Rosenberger, L., Baird, R., McCullen, E., Auner, G., Shreve, G.: XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy. Surf. Interface Anal. 40, 12541261 (2008).
22.Dalmau, R., Collazo, R., Mita, S., Sitar, Z.: X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution. J. Electron. Mater. 36, 414419 (2007).
23.Bowen, P., Highfield, J.G., Mocellin, A., Ring, T.: Degradation of aluminum nitride powder in an aqueous environment. J. Am. Ceram. Soc. 73, 724728 (1990).
24.Bailey, C.L., Mukhopadhyay, S., Wander, A., Searle, B.G., Harrison, N.M.: Structure and stability of α-AlF3 surfaces. J. Phys. Chem. C 113, 49764983 (2009).
25.König, D. and Ebest, G.: The negatively charged insulator–semiconductor structure: Concepts, technological considerations and applications. Solid-State Electron. 44, 111116 (2000).
26.König, D., Ebest, G., Scholz, R., Gemming, S., Thurzo, I., Kampen, T.U., Zahn, D.R.T.: Evidence for high negative charge densities in AlF3 coatings on oxidized silicon: A promising source for large drift fields. Phys. E 14, 259262 (2002).
27.Hees, J., Kriele, A., and Williams, O.A.: Electrostatic self-assembly of diamond nanoparticles. Chem. Phys. Lett. 509, 1215 (2011).
28.Williams, O.A., Hees, J., Dieker, C., Jager, W., Kirste, L., Nebel, C E.: Size-dependent reactivity of diamond nanoparticles. ACS Nano 4, 4824 (2010).


Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation

  • Xin Jia (a1), Jun-jun Wei (a1), Yabo Huang (a1), Siwu Shao (a1), Kang An (a1), Yuechan Kong (a2), Lishu Wu (a2), Zhina Qi (a1), Jinlong Liu (a1), Liangxian Chen (a1) and Chengming Li (a1)...


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