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        Electronic structure, lattice dynamics, and thermoelectric properties of bismuth nanowire from first-principles calculation – CORRIGENDUM
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        Electronic structure, lattice dynamics, and thermoelectric properties of bismuth nanowire from first-principles calculation – CORRIGENDUM
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doi: 10.1557/jmr.2017.88 Published by Materials Research Society with Cambridge University Press, 16 March 2017

After publication of Lu et al. 1 , the authors requested an additional author be added, thanks to their contributions in calculating the thermoelectric transport of crystal Bi and proposing some valuable suggestions. The additional author’s information is as follows:

Chun Kong

School of Energy and Engineering, Henan Polytechnic University, Jiaozuo 454000, China

The original article has since been updated to reflect the addition.

REFERENCE

1. Lu, P., Zhang, M., Zou, W.-J., and Kong, C.: Electronic structure, lattice dynamics, and thermoelectric properties of bismuth nanowire from first-principles calculation. J. Mater. Res. 32(12), 24052413 (2017). doi: 10.1557/jmr.2017.88.