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Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface

  • Oliver Bierwagen (a1), Takahiro Nagata (a2), Mark E. White (a3), Min-Ying Tsai (a4) and James S. Speck (a5)...

Abstract

The transport properties of doped and undoped, high quality, plasma-assisted molecular beam epitaxy grown tin dioxide (SnO2) thin films are reviewed. Intentional doping can vary the SnO2 resistivity over more than seven orders of magnitude from a transparent conducting oxide-like conductivity up to the semi-insulating range. A region of high unintentional n-type conductivity was identified in the substrate interface region and had to be accounted for. Sb was a well-behaved shallow donor up to the regime of conducting oxides. In and Ga were too deep acceptors to achieve p-type conductivity but were suitable to render SnO2 semi-insulating. While the surface accumulation layer strongly influenced contact properties, its conductance was negligible. The methodology used here for studying the transport can also be applied to other semiconducting oxides.

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a)Address all correspondence to this author. e-mail: bierwagen@pdi-berlin.de

References

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Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface

  • Oliver Bierwagen (a1), Takahiro Nagata (a2), Mark E. White (a3), Min-Ying Tsai (a4) and James S. Speck (a5)...

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