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Electrochemical deposition and characterization of Fe3O4 films produced by the reduction of Fe(III)-triethanolamine

Published online by Cambridge University Press:  01 January 2006

Hiten M. Kothari ,
Elizabeth A. Kulp ,
Steven J. Limmer ,
Philippe Poizot ,
Eric W. Bohannan  and
Jay A. Switzer
Hiten M. Kothari
Affiliation:
Department of Chemistry and Graduate Center of Materials Research, University of Missouri–Rolla, Rolla, Missouri 65409-1170
Elizabeth A. Kulp
Affiliation:
Department of Chemistry and Graduate Center of Materials Research, University of Missouri–Rolla, Rolla, Missouri 65409-1170
Steven J. Limmer
Affiliation:
Department of Chemistry and Graduate Center of Materials Research, University of Missouri–Rolla, Rolla, Missouri 65409-1170
Philippe Poizot
Affiliation:
Department of Chemistry and Graduate Center of Materials Research, University of Missouri–Rolla, Rolla, Missouri 65409-1170
Eric W. Bohannan
Affiliation:
Department of Chemistry and Graduate Center of Materials Research, University of Missouri–Rolla, Rolla, Missouri 65409-1170
Jay A. Switzer*
Affiliation:
Department of Chemistry and Graduate Center of Materials Research, University of Missouri–Rolla, Rolla, Missouri 65409-1170
*
a)Address all correspondence to this author. e-mail: jswitzer@umr.edu This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/publications/jmr/policy.html.
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Abstract

In this paper, we demonstrate that films of magnetite, Fe3O4, can be deposited by the electrochemical reduction of a Fe(III)-triethanolamine complex in aqueous alkaline solution. The films were deposited with a columnar microstructure and a [100] preferred orientation on stainless steel substrates. In-plane electrical transport and magnetoresistance measurements were performed on the films after they were stripped off onto glass substrates. The resistance of the films was dependent on the oxygen partial pressure. We attribute the increase in resistance in O2 and the decrease in resistance in Ar to the oxidation and reduction of grain boundaries. The decrease in resistance in an Ar atmosphere exhibited first-order kinetics, with an activation energy of 0.2 eV. The temperature dependence of the resistance showed a linear dependence of log(R) versus T−1/2, consistent with tunneling across resistive grain boundaries. A room-temperature magnetoresistance of −6.5% was observed at a magnetic field of 9 T.

Keywords

FilmSolution depositionX-ray diffraction (XRD)
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 1 , January 2006 , pp. 293 - 301
Copyright
Copyright © Materials Research Society 2006

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References

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