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Electrical resistivity of carbon black loaded polyethylene modified by ion implantation

Published online by Cambridge University Press:  03 March 2011

Václav Švorčik ,
Vladimír Rybka ,
Oleg Jankovskij ,
Vladimír Hnatowicz  and
Jiří Kvítek
Václav Švorčik
Affiliation:
Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague, Czech Republic
Vladimír Rybka
Affiliation:
Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague, Czech Republic
Oleg Jankovskij
Affiliation:
Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague, Czech Republic
Vladimír Hnatowicz
Affiliation:
Institute of Nuclear Physics, Academy of Sciences of Czech Republic, 250 68 Řež, Czech Republic
Jiří Kvítek
Affiliation:
Institute of Nuclear Physics, Academy of Sciences of Czech Republic, 250 68 Řež, Czech Republic
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Abstract

Different properties of the mixtures of polyethylene with carbon black modified by the implantation of Sb+ ions were studied. Chemical changes of polymer were examined by IR- and UV-visible spectroscopy. Sheet resistivity as a function of sample temperature was studied. Depth profiles of implanted Sb atoms and incorporated oxygen were determined by the Rutherford backscattering technique. The percolation threshold of unimplanted mixtures is found at 4.5 and 5 wt. % of carbon black. As a result of ion implantation, the polymer is oxidized and conjugated double bonds are produced. The mixtures with carbon black concentration above percolation threshold exhibit metal-like conductivity. For the mixtures below percolation threshold, the measurements of resistivity versus temperature dependence indicate semiconductor type conductivity and charge transport via a variable range-hopping mechanism.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 3 , March 1994 , pp. 643 - 647
Copyright
Copyright © Materials Research Society 1994

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References

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