Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-18T06:16:43.921Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical breakdown of the positive temperature coefficient of resistivity barium titanate ceramics

Published online by Cambridge University Press:  31 January 2011

Duk-Hee Kim ,
Woo-Sik Um  and
Ho-Gi Kim
Duk-Hee Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon, Korea
Woo-Sik Um
Affiliation:
Material Analysis Laboratory, Test and Inspection Center, Korea Academy of Industrial Technology, Seoul, Korea
Ho-Gi Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon, Korea
Get access

Abstract

Positive temperature coefficient of resistivity barium titanate ceramic is a semiconductor at room temperature, so it is self-heated under certain applied voltage, and then changes into an insulator. The electrical breakdown has been investigated with the resistance-temperature characteristics of the three samples which have different compositions. The grain size effect on the breakdown voltage also is discussed. As the applied voltage increased, the electrical breakdown was initiated when the specimen interior was heated above the temperature corresponding to the maximum resistance on the resistance-temperature curves by joule heat.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 8 , August 1996 , pp. 2002 - 2008
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Haayman, P. W., Dam, R. R., and Klassen, H. A., Ger. Pat. No. 929, 350, June 23, 1955.Google Scholar
2.Heywang, W., Solid-State Electron. 3, 51–58 (1961).Google Scholar
3.Jonker, G. H., Solid State Electron. 7, 895–903 (1964).CrossRefGoogle Scholar
4.Heywang, W., J. Mater. Sci. 6 (5), 1214–24 (1971).CrossRefGoogle Scholar
5.Buchanan, R. C., in Ceramic Materials for Electronics (Marcel Dekker, Inc., New York, 1986), p. 144.Google Scholar
6.Cady, W. G., in Piezoelectricity, Vol. 1 (Dover Pub. Inc., New York, 1964), p. 4.Google Scholar
7.Alts, G. and Peusens, H., Ferroelectrics 48, 213–224 (1983).Google Scholar
8.Rice, R. W. and Pohanka, R. C., 62 (11–12), 559–563 (1979).CrossRefGoogle Scholar
9.Blendell, J. E. and Coble, R. L., J. Am. Ceram. Soc. 65 (3), 174–178 (1982).CrossRefGoogle Scholar
10.Evans, A. G., Acta Metall. 26, 1845–1853 (1978).CrossRefGoogle Scholar
11.Wu, B. Y., Sci. Ceram. 14, 1019–1024 (1988).Google Scholar
12.Pohanka, R. C., J. Am. Ceram. Soc. 61 (1–2), 72–75 (1978).Google Scholar
13.Steele, B. C. H., in Electronic Ceramics (Elsevier Applied Science, New York, Amsterdam, 1991), pp. 29–47.Google Scholar