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Electrical and photoconductive properties of boron-doped potycrystalline diamond films

  • Wenjun Zhang (a1), Bo Hu (a1), Erqin Xie (a1), Yafei Zhang (a1), Li Han (a1), Zhizhong Song (a1) and Guanghua Chen (a1)...

Abstract

The current-voltage (I-V) characteristics and time-dependence photoconductivity of the undoped and B-doped diamond films (DF's) before and after annealing were investigated. The boron and hydrogen concentration in diamond films were measured by means of nuclear reaction analysis (NRA) and the elastic-recoil detection (ERD) technique, respectively. The results show that induced boron atoms and hydrogen atoms affect the electrical and photocoaductive properties of diamond films. During the annealing process, B concentration kept even, but H content decreased. For undoped diamond films, the escaping of H atoms has great effects on the electrical characteristics, but for B-doped samples, this effect decreases with the increase of B concentration.

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Electrical and photoconductive properties of boron-doped potycrystalline diamond films

  • Wenjun Zhang (a1), Bo Hu (a1), Erqin Xie (a1), Yafei Zhang (a1), Li Han (a1), Zhizhong Song (a1) and Guanghua Chen (a1)...

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