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Effects of Properties and Growth Parameters of Doped and Undoped Silicon Oxide Films on Wear Behavior During Chemical Mechanical Planarization Process

  • A.K. Sikder (a1), Ashok Kumar (a2), S. Thagella (a3) and Jiro Yota (a4)

Abstract

Understanding the tribological, mechanical, and structural properties of an inorganic and organic dielectric layer in the chemical mechanical planarization (CMP) process is crucial for successful evaluation and implementation of these materials with copper metallization. Polishing behaviors of different carbon- and fluorine-doped silicon dioxide (SiO2) low dielectric constant materials in CMP process are discussed in this paper. Films were deposited using both chemical vapor deposition and spin-on method. Carbon and fluorine incorporation in the Si–O network weaken the mechanical integrity of the structure and behave differently in slurry selective to SiO2 films. Mechanical properties of the films were measured using depth-sensing nanoindentation technique, and it was found that undoped SiO2 film has the highest and spin-on carbon-doped oxide films have the lowest hardness and modulus values. Wear behavior of the doped SiO2 is studied in a typical SiO2 CMP environment, and results are analyzed and compared with those of the undoped SiO2 films. Coefficient of friction and acoustic emission signals have significant effect on the polishing behavior. Surface of the films are investigated before and after polishing using atomic force microscopy. Roughness and section analysis of the films after polishing show the variation in wear mechanism. Validation of Preston’s equation is discussed in this study. Additionally, different wear mechanisms are presented, and a two body abrasion model is proposed for the softer films.

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Corresponding author

a)Address all correspondence to this author. e-mail: akumar@eng.usf.edu

References

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1Steigerwald, J.M., Murarka, S.P. and Gutmann, R.J.: Chemical Mechanical Planarization of Microelectronic Materials (Wiley-Interscience, New York, 1997)
2Wrschka, P., Hernandez, J., Oehirin, G.S. and King, J.: Chemical Mechanical Planarization of Copper Damascene Structures. J. Electrochem. Soc. 147, 706 (2000).
3Louis, D., Arvet, C., Lajoinie, E., Peyne, C., Lee, S., Berry, I. and Han, Q.: Resist removal process in dual damascene structure integrating Cu and SiLK® for 0.18 μm technology. Microelectron. Eng. 53, 381 (2000).
4Larsen-Basse, J. and Liang, H.: Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear. 233235, 647 (1999).
5Hartmannsgruber, E., Zwicker, G. and Beekmann, K.: A Selective CMP process for stacked low-k CVD oxide films. Microelectron. Eng. 50, 5358 (2000).
6Bhushan, M., Rouse, R. and Lukens, J.E.: Chemical-Mechanical Polishing in Semidirect Mode. J. Electrochem. Soc. 142, 3845 (1995).
7Carpio, R., Farkas, J. and Jairath, R.: Initial study on copper CMP slurry chemistries. Thin Solid Films. 266, 238 (1995).
8DeJule, R.: CMP Challenges Below a Quarter Micron. Semicond. Int. November. 20, 5460 (1997).
9Runnels, S.R. and Eyman, L.M.: Tribology Analysis of Chemical-Mechanical Polishing. J. Electrochem. Soc. 141, 1900 (1994).
10Reynolds, J., Swecker, A.L., Strojwas, A.J., Levy, A., Bell, B. and : Defect Inspection technologies to meet the challenges of advanced CMP process. Solid State Technol. 41, 39 (1998).
11Runnels, S.: Advances in Physically Based Erosion Simulators for CMP. J. Electron. Mater. 25, 1574 (1996).
12Thakurta, D.P., Borst, C.L., Schwendman, D.W., Gutman, R.J. and Grill, W.N.: Pad Porosity, compressibility and slurry delivery effects in chemical-mechanical planarization: modeling and experiments. Thin Solid Films. 336, 181 (2000).
13Sikder, A.K., Irfan, I.M., Kumar, A., Belyaev, A., Ostapenko, S., Calves, M., Harmon, J.P. and Anthony, J.M. in Chemical-Mechanical Polishing 2001—Advances and Future Challenges , edited by Babu, S.V., Cadien, K.C., and Yano, H. (Mater. Res. Soc. Proc. 671, Warrendale, PA, 2001) p. M1.8.1–7
14Peters, L.: Has the Low-k Debate Been Settled. Semicond. Int. 26, 1719 (2003).
15Ting, C.H. and Seidel, T.E. in Low-Dielectric Constant Materials—Synthesis and Applications in Microelectronics , edited by Lu, T-M., Murarka, S.P., Kuan, T-S., and Ting, C.H. (Mater. Res. Soc. Symp. Proc. 381, Pittsburgh, PA, 1995) p. 3
16Maex, K., Baklanov, M.R., Shamiryan, D., Iacopi, F., Brongersma, S.H. and Yanovitskaya, Z.S.: Low dielectric constant materials for microelectronics. J. Appl. Phys. 93, 8793 (2003).
17 SEMATECH Low Dielectric Constant Materials and Interconnects Workshop, San Diego, CA, 1996
18Peters, L.Pursing the perfect low k, Semicond. Int., 21, (1998)
19Ryan, T. and Fox, R. III: Low-k Dielectric Materials for Advanced Interconnect Applications, Future Fab. 8, July (2000).
20 Applications Note MAL123, “Introducing Low-k Dielectrics into Semiconductor Processing.” Available: www.mykrolis.com/publications.nsf/491ed033a874795e85256c750078701a/dcc71529daa48c5e85256c4800744cf0?opendocument
21Merchant, S., Kang, S.H., Sanganeria, M., van Schravendijk, B. and Mountsier, T.: Copper Interconnects for Semiconductor Devices. JOM. 53, 4348 (2001).
22Homma, T.: Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections. Mater. Sci. Eng. R23, 243 (1998).
23Maex, K., Baklanov, M.R., Shamiryan, D., Lacopi, F., Brongersma, S.H. and Yanovitskaya, Z.S.: Low dielectric constant materials for microelectronics. J. Appl. Phys. 93, 8793 (2003).
24Peters, L.: Semicond. Int., Low-k Dielectrics: Will Spin-on or CVD Prevail?, 23, 108 (2000).
25Pauling, L.: The Nature of The Chemical Bond , 3rd ed. (Cornell University Press, New York, 1960)
26Yi, J.W., Lee, Y.H. and Farouk, B.: Low dielectric fluorinated amorphous carbon thin films grown from C6F6 and Ar plasma. Thin Solid Films. 374, 103 (2000).
27Laxman, R.K., Hendricks, N.H., Arkles, B. and Tabler, T.A.Synthesizing Low-K CVD materials for Fab Use, Semicond. Int. 23, (2000)
28Kim, Y-H., Hwang, M-S., Kim, H.J., Lee, Y. and Kim, J.Y.: Infrared spectroscopy study of low dielectric constant fluorine-incorporated and carbon-incorporated silicon-oxide films. J. Appl. Phys. 90, 3367 (2001).
29Yota, J., Li, G., Joshi, A., Hander, J., and Sanganeria, M.: Proc. 6th International Dielectrics for ULSI Multilevel Interconnection Conference (DUMIC), pp. 142–150, February 2000.
30Korczynski, E.: Low-k dielectric costs for dual-damascene integration. Solid State Technol. 39, 63 (1996).
31Zhou, H., Kim, H.K., Shi, F.G., Zhao, B. and Yota, J.: Thickness dependent glass transition temperature of PEVCD low-k dielectric thin films: Effect of deposition methods. Microelectron. J. 33, 221 (2002).
32Pharr, G.M.: Measurement of mechanical properties by ultra-low load indentation. Mater. Sci. Eng. A253, 151 (1998).
33Oliver, W.C. and Pharr, G.M.: An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992).
34Sikder, A.K., Giglio, F., Wood, J., Kumar, A. and Anthony, J.M.: Optimization of Tribological Properties of Silicon Dioxide During Chemical Mechanical Planarization Process. J. Electron. Mater. 30, 1520 (2001).
35Sikder, A.K. and Kumar, A.: Mechanical and Tribological Properties of Interlayer Coatings for Cu Damascene Process. J. Electron. Mater. 31, 1016 (2002).
36Sikder, A.K., Thagella, S., Bandugilla, U.C. and Kumar, A. in Surface Engineering 2001—Fundamentals and Applications , edited by Meng, W.J., Kumar, A., Doll, G.L., Cheng, Y-T., Veprek, S., and Chung, Y-W. (Mater. Res. Soc. Symp. Proc. 697, Warrendale, PA, 2001) pp. 411416
37Ganesan, R., Das, T.K., Sikder, A.K. and Kumar, A.: Wavelet-based identification of delamination defect in CMP (Cu-low k) using nonstationary acoustic emission signal. IEEE Trans. Semicond. Manufacturing. 16, 677 (2003).
38Sikder, A.K., Zantye, P., Thagella, S., Kumar, A., Vinogradov, B.M., and Gitis, N.V.: Proceedings of 8th CMPMIC Conf., pp. 120–127, 2003.
39Sikder, A.K., Irfan, I.M., Kumar, A., and Anthony, J.M., Nano-indentation studies of Xerogel and SiLK low-K dielectric materials. J. Electron. Mater. 30, 1527 (2001).
40Chudoba, T. and Richter, F.: Investigation of creep behaviour under load during indentation experiments and its influence on hardness and modulus results. Surf. Coat. Technol. 148, 191 (2001).
41Knapp, J.A., Follstaedt, D.M., Myers, S.M., Barbour, J.C. and Friedmann, T.A.: Finite-element modeling of nanoindentation. J. Appl. Phys. 85, 1460 (1999).
42Preston, F.: The Theory and Design of Plate Glass Polishing Machines. J. Soc. Glass Technol. 11, 214 (1927).
43Hartmannsgruber, E., Zwicker, G. and Beekmann, K.: A Selective CMP process for stacked low-k CVD oxide films. Microelectronic Eng. 50, 53 (2000).
44Bastawros, A., Chandra, A., Guo, Y. and Yan, B.: Pad effects on material-removal rate in chemical-mechanical planarization. J. Elec. Mater. 31, 1022 (2002).
45Cook, L.: Chemical processing in glass polishing. J. Non-Cryst. Solids 120, 152 (1990).
46Tseng, W-T., Hsieh, Y-T., Lin, C-F., Tsai, M-S. and Feng, M-S.: Re-examination of pressure and speed dependences of removal rate during CMP processes. J. Electrochem. Soc. 144, 1100 (1997).
47Wu, Z-C., Shiung, Z-W., Chiang, C-C., Wu, W-H., Chen, M-C., Jeng, S-M., Cheng, W., Chou, P-F., Jang, S-M.Yu, C-H. and Liang, M-S.: Physical and Electrical Characteristics of F- and C-Doped Low Dielectric Constant CVD Oxides. J. Electrochem. Soc. 148 F115 (2001).
48Nakasaki, Y., Miyajima, H., Katsumata, R. and Hayasaka, N.The Institute of Electrical Engineers of Japan, Proc. Symp. Dry Process, Tokyo, Japan 1-3 November, p. 85 (1996)
49Borst, C.L., Korthuis, V., Shinn, G.B., Luttmer, J.D., Gutmann, R.J. and Gill, W.N.: Chemical-mechanical polishing of SiOC organosilicate glasses: The effect of film carbon content. Thin Solid Films. 385, 281 (2001).
50Luo, J. and Dornfeld, D.A.: Material removal mechanism in chemical mechanical polishing: Theory and modeling. IEEE Trans. Semicond. Manufacturing. 14, 112 (2001).
51Fu, G., Chandra, A., Guha, S. and Subhash, G.: A plasticity-based model of material removal in chemical-mechanical polishing (CMP) . IEEE Trans. Semicond. Manufacturing. 14, 406 (2001).

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Effects of Properties and Growth Parameters of Doped and Undoped Silicon Oxide Films on Wear Behavior During Chemical Mechanical Planarization Process

  • A.K. Sikder (a1), Ashok Kumar (a2), S. Thagella (a3) and Jiro Yota (a4)

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