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Effects of PLT-buffer layer on microstructures of sputtered PLZT thin films epitaxially grown on sapphire

Published online by Cambridge University Press:  03 March 2011

Kiyotaka Wasa ,
Toshifumi Satoh ,
Kenji Tabata ,
Hideaki Adachi ,
Yasumufi Yabuuchi  and
Kentaro Setune
Kiyotaka Wasa
Affiliation:
Research Institute of Innovative Technology for the Earth (RITE), 9-2 Kizugawadai, Kizu-cho, Kyoto 619-02, Japan
Toshifumi Satoh
Affiliation:
Research Institute of Innovative Technology for the Earth (RITE), 9-2 Kizugawadai, Kizu-cho, Kyoto 619-02, Japan
Kenji Tabata
Affiliation:
Research Institute of Innovative Technology for the Earth (RITE), 9-2 Kizugawadai, Kizu-cho, Kyoto 619-02, Japan
Hideaki Adachi
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., 3-4 Hikaridai, Seika-cho, Kyoto 619-02, Japan
Yasumufi Yabuuchi
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., 3-4 Hikaridai, Seika-cho, Kyoto 619-02, Japan
Kentaro Setune
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., 3-4 Hikaridai, Seika-cho, Kyoto 619-02, Japan
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Abstract

The microstructures of sputtered thin films of lead-lanthanum zirconate-titanate (PLZT) on (0001) sapphire substrate have been studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Thin films of polycrystalline PLZT (9/65/35), Pb0.91La0.09Zr0.65Ti0.35O3, were prepared on a (0001) sapphire substrate by reactive sputtering, using the dc-magnetron system with a multitarget, Pb, La, Zr, and Ti at the substrate temperature of 700 °C. The PLZT thin films comprised (111) oriented small crystallites of PLZT. Although the average direction of the crystal orientation corresponded to the ideal epitaxial relationship (111) PLZT ‖ (0001) sapphire, the individual crystallites showed misalignment in both the growth direction and the film plane. The thin films could not be considered epitaxially grown films. From analysis of the TEM images, there exists an interfacial region between the PLZT thin film and the substrate. The interfacial region comprises ordered clusters of (111), disordered (101), and/or (110) PLZT crystallites. The presence of the interfacial region will suppress ideal epitaxial growth with uniform crystal orientation. It is confirmed that the addition of the buffer layer of graded composition of PLT-PLZT, between the substrate and the PLZT thin film, will suppress the formation of the disordered interfacial region and will enhance the epitaxial growth of the (111) PLZT on (0001) sapphire with three-dimensional crystal orientations.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2959 - 2967
Copyright
Copyright © Materials Research Society 1994

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References

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