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Effects of plasma power on the properties of low-k polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor

Published online by Cambridge University Press:  31 January 2011

Jongryang Joo ,
Yong Chun Quan  and
Donggeun Jung
Jongryang Joo
Affiliation:
Department of Physics, Institute of Basic Science, and Department of Vacuum Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Yong Chun Quan
Affiliation:
Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea
Donggeun Jung
Affiliation:
Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea
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Extract

Effects of plasma power on the properties of polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor were studied. As the plasma power was increased from 5 to 60 W, the relative dielectric constant increased from 2.53 to 2.85. The film deposited at higher plasma power showed higher thermal stability. The film deposited at 60 W was stable up to 400 °C. All the films were insulating under applied field ≤1 MV/cm.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 228 - 230
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Derbyshire, K., Solid State Technol. 41(2), 26 (1998).Google Scholar
2.Senkevich, J.J. and Desu, S.B., Appl. Phys. Lett, 72, 258 (1998).CrossRefGoogle Scholar
3.Gaynor, J.F. and Desu, S.B., J. Mater. Res. 9, 3125 (1994).CrossRefGoogle Scholar
4.You, L., Yang, G-R., Lang, C-I., Moore, J.A., Wu, P., McDonald, J.F., and Lu, T-M., J. Vac. Sci. Technol. A 11, 3047 (1993).CrossRefGoogle Scholar
5.Endo, K. and Tatsumi, T., Appl. Phys. Lett. 70, 2616 (1997).CrossRefGoogle Scholar
6.Grill, A., Cold Plasma in Materials Fabrication (IEEE Press, New York, 1994), pp. 180–183.CrossRefGoogle Scholar
7.Jung, D., Pang, H., Park, J.H., Park, Y.W., and Son, Y., Jpn. J. Appl. Phys. 38, L84 (1999).Google Scholar
8.Pavia, D.L., Lampman, G.M., and Kriz, G.S., Introduction to Spectroscopy, 2nd ed. (Harcourt Brace, Orlando, FL, 1996), pp. 43–45.Google Scholar