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Effects of oxygen ion energy on the growth of CuO films by molecular beam epitaxy using mass-separated low-energy O+ beams

  • Ryusuke Kita (a1), Kenichi Kawaguchi (a1), Takashi Hase (a1), Takeshi Koga (a1), Rittaporn Itti (a1) and Tadataka Morishita (a1)...

Abstract

We have studied the effects of the kinetic energy of mass-separated O+ beams on the growth of CuO thin films deposited on unheated MgO(001) and at 510 °C, in energy ranging from 10 to 200 eV by x-ray photoemission spectroscopy, x-ray diffraction, reflection high-energy electron diffraction, and scanning electron microscopy. The films deposited at 510 °C show a full width at the half maximum (FWHM) of 0.06°for the rocking curve through the (111) peak, regardless of the kinetic energy of oxygen ions. CuO has been epitaxially grown on MgO(001) without heating it in a vacuum of 4 × 10−7 Pa. The x-ray diffraction intensity of the CuO(111) increases with an increase in the kinetic energy of O+, and its FWHM approaches that of the CuO film grown at 510 °C. The surface morphology is improved for the films deposited on unheated substrates.

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Effects of oxygen ion energy on the growth of CuO films by molecular beam epitaxy using mass-separated low-energy O+ beams

  • Ryusuke Kita (a1), Kenichi Kawaguchi (a1), Takashi Hase (a1), Takeshi Koga (a1), Rittaporn Itti (a1) and Tadataka Morishita (a1)...

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