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Effects of hydrogenated amorphous carbon interlayer on diamond nucleation

Published online by Cambridge University Press:  31 January 2011

W. S. Yang ,
T. S. Kim  and
Jung Ho Je
W. S. Yang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science –784, Republic of Korea
T. S. Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science –784, Republic of Korea
Jung Ho Je*
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science –784, Republic of Korea
*
a) Corresponding author jhje@postech.ac.kr.
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Abstract

Diamond was deposited at 850 °C by microwave plasma chemical vapor deposition (CVD) on the interlayers with various intensity ratios (ID/IG) of the D band (~1400 cm-1) to the G band (~1570 cm-1) in the Raman spectra. Diamond could be grown only on the interlayers with higher ID/IG (≤1.95), and Nd was slightly increased to 3 × 106/cm2with ID/IG. The predeposition at 350 °C, which decreased the full-width at half-maximum of the broad D band, further increased Nd to 5 × 107/cm2. With 300 ÅA Pt overlayer on the interlayer, Nd was much more enhanced to 8 × 107/cm2. We suggest the sp3 bonded carbon clusters within the interlayer contribute to diamond nucleation, but they should be survived against atomic hydrogen etching during diamond deposition by increasing the sp3/sp2 ratio, by increasing the degree in clustering, or by protecting them with overlayer.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 3 , March 1998 , pp. 596 - 603
Copyright
Copyright © Materials Research Society 1998

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