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Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon

Published online by Cambridge University Press:  31 January 2011

Woong Choi  and
Tim Sands
Woong Choi
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley, California 94720
Tim Sands
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley, California 94720
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Abstract

The effect of oxygen partial pressure on the preferred orientation of CeO2 thin films was investigated by depositing CeO2 thin films and Pb(Zr, Ti)O3/CeO2 multilayers on Si (100) substrates by pulsed laser deposition. CeO2 thin films exhibited random polycrystalline grain structures at high oxygen partial pressure (≥40 mtorr), a result that is contrary to previous reports. The relationship of the preferred orientations observed between Pb(Zr, Ti)O3 films and the CeO2 layer underneath confirmed that random polycrystalline CeO2 was obtained at high oxygen partial pressure. It was suggested that x-ray diffraction data in previous reports might have been misinterpreted.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 8 , August 2003 , pp. 1753 - 1756
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Wu, Y. and Lo, J., Jpn. J. Appl. Phys. 37, 4943 (1998).CrossRefGoogle Scholar
Inoue, T., Yamamoto, Y., Koyama, S., Suzuki, S., and Ueda, Y., Appl. Phys. Lett. 56, 1332 (1990).CrossRefGoogle Scholar
Yoshimoto, M., Nagata, H., Tsukahara, T., and Koinuma, H., Jpn. J. Appl. Phys. 29, L1199 (1990).CrossRefGoogle Scholar
Hirai, T., Teramoto, K., Koike, H., Nagashima, K., and Tarui, Y., Jpn. J. Appl. Phys. 36, 5253 (1997).CrossRefGoogle Scholar
Inoue, T., Yamamoto, Y., and Satoh, M., J. Vac. Sci. Technol. A 19, 275 (2001).CrossRefGoogle Scholar
Copetti, A., Soltner, H., Schubert, J., Zander, W., Hollricher, O., Buchal, Ch., Schulz, H., Tellman, N., and Klein, N., Appl. Phys. Lett. 63, 1429 (1993).CrossRefGoogle Scholar
Wakiya, N., Yamada, T., Shinozaki, K., and Mizutani, N., Thin Solid Films 371, 211 (2000).CrossRefGoogle Scholar
Li, M., Wang, Z., Fan, S., Zhao, Q., and Xiong, G., Nucl. Instrum. Methods Phys. Res. B. 135, 535 (1998).CrossRefGoogle Scholar
Kang, J., Liu, X., Lian, G., Zhang, Z., Xiong, G., Guan, X., Han, R., and Wang, Y., Microelectron. Eng. 56, 191 (2001).CrossRefGoogle Scholar
Wang, R., Pan, S., Zhou, Y., Zhou, G., Liu, N., Xie, K., and Lu, H., J. Cryst. Growth 200, 505 (1999).CrossRefGoogle Scholar
Nakagawara, O., Kobayashi, M., Yoshino, Y., and Katayama, Y., J. Appl. Phys. 78, 7226 (1995).CrossRefGoogle Scholar
Azaroff, L., Elements of X-ray Crystallography (McGraw Hill, New York, 1968), p. 295.Google Scholar
Hubler, G., in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D. and Hubler, G. (John Wiley & Sons, New York, 1994), pp. 327, 355.Google Scholar