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Effect of hydrogenated amorphous carbon films on nucleation of diamond particles by hot-filament chemical vapor deposition

Published online by Cambridge University Press:  03 March 2011

Kazunori Tamaki ,
Yoshikazu Nakamura ,
Yoshihisa Watanabe  and
Shigekazu Hirayama
Kazunori Tamaki
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshikazu Nakamura
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Yoshihisa Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
Shigekazu Hirayama
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239, Japan
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Abstract

To enhance a nucleation rate of diamond particles, hydrogenated amorphous carbon (a-C: H) intermediate layers have been formed by radio frequency plasma chemical vapor deposition (CVD) on silicon substrates prior to diamond deposition by hot filament CVD, and the effect of a-C: H intermediate layers on the nucleation and growth rate of diamond particles is studied by varying the thickness of a-C: H films. It is found that diamond particles are well synthesized on thin a-C: H intermediate layers and the nucleation density and growth rate are decreased with increasing the thickness of a-C: H films. Atomic force microscope observations show that a-C: H intermediate layers with rough surface are more effective than the smooth surface for diamond synthesis. Raman spectroscopy shows that the bonding state of carbon atoms in a-C: H films does not change by varying the thickness of a-C: H films. It is proposed that diamond nucleation is affected by the surface morphology rather than the bonding state of carbon atoms in a-C: H films.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 2 , February 1995 , pp. 431 - 435
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Kim, J. W., Baik, Y. J., and Eun, K. Y., in Applications of Diamond Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M., and Feldman, A. (Elsevier Science, New York, 1991), p. 399.Google Scholar
2Haq, S., Savage, J. A., and Tunnicliffe, D. L., in Applications of Diamond Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M., and Feldman, A. (Elsevier Science, New York, 1991), p. 405.Google Scholar
3Nakamura, Y., Tamaki, K., Watanabe, Y., and Hirayama, S., J. Mater. Res. 9, 1619 (1994).CrossRefGoogle Scholar
4Dubray, J. J., Pantano, C. G., Mecloncelli, M., and Bertan, E., J. Vac. Sci. Technol. A 9, 3012 (1991).CrossRefGoogle Scholar
5Narayan, J., Godbole, V. P., Matera, G., and Singh, R. K., J. Appl. Phys. 71, 966 (1992).CrossRefGoogle Scholar
6Sung, C. P. and Shih, H. C., J. Mater. Res. 7, 105 (1992).CrossRefGoogle Scholar
7Tamaki, K., Watanabe, Y., Nakamura, Y., and Hirayama, S., Thin Solid Films 236, 115 (1993).CrossRefGoogle Scholar
8Ravi, K. V., Koch, C. A., Hu, H. S., and Joshi, A., J. Mater. Res. 5, 2356 (1990).CrossRefGoogle Scholar
9Barnes, P. N. and Wu, R. L. C., Appl. Phys. Lett. 62, 37 (1993).CrossRefGoogle Scholar