Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-25T02:34:19.063Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Electroless Copper on the Growth of ZnO Nanowires

Published online by Cambridge University Press:  03 March 2011

Wen-Ting Chiou ,
Wan-Yu Wu  and
Jyh-Ming Ting
Wen-Ting Chiou
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan
Wan-Yu Wu
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan
Jyh-Ming Ting*
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan
*
a) Address correspondence to this author. e-mail: jting@mail.ncku.edu.tw
Get access

Abstract

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

Keywords

NanoscalePhysical vapor deposition (PVD)Sputtering
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2348 - 2353
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Huang, M.H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R. and Yang, P.: Room-temperature ultraviolet nanowire nanolasers. Science 292, 1897 (2001).CrossRefGoogle ScholarPubMed
2Jin, B.J., Bae, S.H., Lee, S.Y. and Im, S.: Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition. Mater. Sci. Eng. B 71, 301 (2000).CrossRefGoogle Scholar
3Pieralli, C. and Hoummady, M.: New optical probe using ZnO whiskers: Analyses. of sub-wavelength dithering and evanescent wave propagation. Appl. Phys. A 66, S377 (1998).CrossRefGoogle Scholar
4Zhou, Z., Deng, H., Yi, J. and Liu, S.: A new method for preparation of zinc oxide whiskers. Mater. Res. Bull. 34, 1563 (1999).CrossRefGoogle Scholar
5Zhou, Z., Peng, W., Ke, S. and Deng, H.: Tetrapod-shaped ZnO whisker and its composites. J. Mater. Process. Tech. 89–90, 415 (1999).CrossRefGoogle Scholar
6Wang, Y.W., Zhang, L.D., Wang, G.Z., Peng, X.S., Chu, Z.Q. and Liang, C.H.: Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties. J. Cryst. Growth 234, 171 (2002).CrossRefGoogle Scholar
7Huang, M.H., Wu, Y., Feick, H., Tran, N., Weber, E. and Yang, P.: Catalytic growth of zinc oxide nanowires by vapor transport. Adv. Mater. 13, 113 (2001).3.0.CO;2-H>CrossRefGoogle Scholar
8Li, Y., Meng, G.W., Zhang, L.D. and Phllipp, F.: Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. Appl. Phys. Lett. 76, 2011 (2000).CrossRefGoogle Scholar
9Vayssieres, L., Keis, K., Hagfeldt, A. and Lindquist, S.E.: Three-dimensional array of highly oriented crystalline ZnO microtubes. Chem. Mater. 13, 4395 (2001).CrossRefGoogle Scholar
10Chang, Y.S. and Ting, J.-M.: Growth of ZnO thin films and whiskers. Thin Solid Films 398–399, 29 (2001).CrossRefGoogle Scholar
11Ting, J-M., Chiou, W-T. and Wu, W-Y.: Growth of single-crystal ZnO nanowires using sputter deposition. Diamond Relat. Mater. 12, 1841 (2003).Google Scholar
12Chang, Y.S. Deposition of ZnO on copper metallized silicon wafers. Master’s Thesis, National Cheng Kung University, Taiwan, 2000.Google Scholar
13Cullity, B.D.: Elements of X-Ray Diffraction (Addison-Wesley Pub. Co., Reading, MA, 1978).Google Scholar
14 Stress analysis, in X-ray Diffraction Handbook (in Japanese) (Rigaku Co., Tokyo, Japan, 1998), Chap. 3.Google Scholar
15Li, S.Y., Lin, P., Lee, C.Y. and Tsenga, T.Y.: Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor–liquid–solid process. J. Appl. Phys. 95(7), 3711 (2004).CrossRefGoogle Scholar
16Vanheusden, K., Warren, W.L., Seager, C.H., Tallant, D.R., Voigt, J.A. and Gnade, B.E.: Mechanisms behind green photoluminescence in ZnO phosphor powders. J. Appl. Phys. 79, 7983 (1996).CrossRefGoogle Scholar
17Harikumar, K.R., Santra, A.K. and Rao, C.N.R.: An investigation of the Cu/ZnO/Zn system: Evidence for the formation of Cu–Zn alloys by the inward diffusion of Cu. Appl. Surf. Sci. 93, 135 (1996).CrossRefGoogle Scholar
18Shewmon, P.: Diffusion in Solids, 2nd ed. (Minerals, Metals & Materials Society, Warrendale, PA, 1989).Google Scholar
19Kubaschewski, E., Evans, L.L. and Alcock, C.B.: Metallurgical Thermochemistry, 4th ed. (Pergamon Press, New York, 1967).Google Scholar
20Hwang, M.H.: Room-temperature ultraviolet nanowire nanolasers. Science 292, 1897 (2001).Google Scholar
21Yang, P.: Controlled growth of ZnO nanowires and their optical properties. Adv. Funct. Mater. 12(5), 323 (2002).3.0.CO;2-G>CrossRefGoogle Scholar
22Lyu, S.C.: Low temperature growth and photoluminescence of well-aligned zinc oxide nanowires. Chem. Phys. Lett. 363, 134 (2002).CrossRefGoogle Scholar
23Li, S.Y.: Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor–liquid–solid process. J. Cryst. Growth 247, 357 (2003).CrossRefGoogle Scholar