Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-23T10:46:14.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of as-deposited residual stress on transition temperatures of VO2 thin films

Published online by Cambridge University Press:  03 March 2011

Kuang Yue Tsai ,
Tsung-Shune Chin ,
Han-Ping D. Shieh  and
Cheng Hsin Ma
Kuang Yue Tsai
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
Tsung-Shune Chin*
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
Han-Ping D. Shieh
Affiliation:
Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
Cheng Hsin Ma
Affiliation:
Materials Science and Engineering, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
*
a) Address all correspondence to this author.e-mail: tschin@mx.nthu.edu.tw
Get access

Abstract

Transmittance loops upon thermal cycling of VO2 thin films were found to change among films with different fabrication conditions that lead to different transition temperatures (Tts) from that of a strain-free VO2 single crystal, 68 °C. The residual stresses in the films quantitatively determined from x-ray diffractometry were used to explain this variation. Electron spectroscopy for chemical analysis spectra showed that the difference in the binding energy of core electrons 2p1/2 and 2p3/2 of the vanadium atom are affected by residual stress and proportional to Tts of the films. The bond length between vanadium and oxygen atoms at room temperature varies with different residual stresses and, furthermore, affects the movements of both atoms during phase change (and hence the Tt of VO2 thin films). Residual stresses also affect the hysteresis span of the transmittance loop. The relationship between the residual stress of as-deposited VO2 films and the relative positions between vanadium and oxygen atoms are also delineated in detail.

Keywords

Thin filmOpticalMetal-insulator transition
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2306 - 2314
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Goodenough, J.B.: The two components of the crystallographic transition in VO2. J. Solid State Chem. 3, 490 (1971).Google Scholar
2.Lu, S., Hou, L. and Gan, F.: Structure and optical property changes of sol-gel derived VO2 thin films. Adv. Mater. 9, 244 (1997).Google Scholar
3.Shigesato, Y., Enomoto, M. and Odaka, H.: Thermochromic VO2 films deposited by RF magnetron sputtering using V2O3 or V2O5 targets. Jpn. J. Appl. Phys. 39, 6016 (2000).CrossRefGoogle Scholar
4.Krishna, M.G., Debauge, Y. and Bhattacharya, A.K.: X-ray photoelectron spectroscopy and spectral transmittance study of stoichiometry in sputtered vanadium oxide films. Thin Solid Films 312, 116 (1998).Google Scholar
5.Griffiths, C.H. and Eastwood, H.K.: Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide. J. Appl. Phys. 45, 2201 (1974).Google Scholar
6.Fukuma, M., Zembutsu, S. and Miyazawa, S.: Preparation of VO2 thin film and its direct optical bit recording characteristics. Appl. Opt. 22, 265 (1983).Google Scholar
7.Nyberg, G.A. and Buhrman, R.A.: Preparation and optical properties of reactively evaporated VO2 thin films. J. Vac. Sci. Technol. A 2, 301 (1984).CrossRefGoogle Scholar
8.Gregg, J.M. and Bowman, R.M.: Effect of applied strain on the resistance of VO2 thin films. Appl. Phys. Lett. 71, 3649 (1997).CrossRefGoogle Scholar
9.Zheng, C., Zhang, X. and Zhang, J.: Preparation and Characterization of VO2 Nanopowders. J. Solid State Chem. 156, 274 (2001).Google Scholar
10.Guzman, G., Beteille, F., Morineau, R. and Livage, J.: Electrical switching in VO2 sol-gel films. J. Mater. Chem. 6, 505 (1996).Google Scholar
11.Lu, S., Hou, L. and Gan, F.: Surface analysis and phase transition of gel-derived VO2 thin films. Thin Solid Films 353, 40 (1999).Google Scholar
12.Lu, S., Hou, L. and Gan, F.: Preparation and optical properties of phase-change VO2 thin films. J. Mater. Sci. 28, 2177 (1993).Google Scholar
13.Eden, D.D.: Optical properties of VO2 thin films. Optical Processing Systems 185, 97 (1978).Google Scholar
14.Guinneton, F., Sauques, L., Valmalette, J.C., Cros, F. and Gavarri, J.R.: Comparative study between nanocrystalline powder and thin film of vanadium dioxide VO2: Electrical and infrared properties. J. Phys. Chem. Solids 62, 1229 (2001).CrossRefGoogle Scholar
15.Muraoka, Y., Ueda, Y. and Hiroi, Z.: Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates. J. Phys. Chem. Solids 63, 965 (2002).Google Scholar
16.Case, F.C.: Influence of ion beam parameters on the electrical and optical properties of ion-assisted reactively evaporated vanadium dioxide films. J. Vac. Sci. Technol. A 5, 1762 (1987).CrossRefGoogle Scholar
17.Ma, C.H., Huang, J.H. and Chen, Haydn: Residual stress measurement in textured thin film by grazing-incidence x-ray diffraction. Thin Solid Films 418, 73 (2002).Google Scholar
18.Sawatzky, G.A. and Post, D.: X-ray photoelectron and Auger spectroscopy study of some vanadium oxides. Phys. Rev. B 20, 1546 (1979).Google Scholar
19.Christmann, T., Felde, B., Niessner, W., Schalch, D. and Scharmann, A.: Thermochromic VO2 thin films studied by photoelectron spectroscopy. Thin Solid Films 287, 134 (1996).CrossRefGoogle Scholar
20.Finegan, J.D. and Hoffman, R.W.: Stress anisotropy in evaporated iron films. J. Appl. Phys. 30, 597 (1959).CrossRefGoogle Scholar
21.Doljack, F.A. and Hoffman, R.W.: The origins of stress in thin nickel films. Thin Solid Films 12, 71 (1972).CrossRefGoogle Scholar
22.Martinz, H.P. and Abermann, R.: Interaction of O2, CO, H2O, H2 and N2 with thin chromium films studied by internal stress measurements. Thin Solid Films 89, 133 (1982).CrossRefGoogle Scholar