Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Dunstan, D J
1991.
Relaxed buffer layers.
Semiconductor Science and Technology,
Vol. 6,
Issue. 9A,
p.
A76.
Adams, A R
Dunstan, D J
and
O'Reilly, E P
1991.
Strained Layers for Optoelectronic Devices.
Physica Scripta,
Vol. T39,
Issue. ,
p.
196.
Chow, D H
Miles, R H
Schulman, J N
Collins, D A
and
McGill, T C
1991.
Type II superlattices for infrared detectors and devices.
Semiconductor Science and Technology,
Vol. 6,
Issue. 12C,
p.
C47.
Krost, A.
Grundmann, M.
Bimberg, D.
and
Cerva, H.
1992.
InP on patterned Si(001): defect reduction by application of the necking mechanism.
Journal of Crystal Growth,
Vol. 124,
Issue. 1-4,
p.
207.
Lingunis, E. H.
Haegel, N. M.
and
Karam, N. H.
1992.
Thermal stress distributions in GaAs on sawtooth-patterned Si substrates: A finite element approach.
Applied Physics Letters,
Vol. 61,
Issue. 18,
p.
2202.
Tiwari, A.N.
Freundlich, A.
Beaumont, B.
Blunier, S.
Zogg, H.
Teodoropol, S.
and
Vèrié, C.
1992.
Metalorganic vapor phase epitaxy of GaAs on Si using IIa-flouride buffer layers.
Journal of Crystal Growth,
Vol. 124,
Issue. 1-4,
p.
565.
Grundmann, M.
Krost, A.
Bimberg, D.
Ehrmann, O.
and
Cerva, H.
1992.
Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of optical properties.
Applied Physics Letters,
Vol. 60,
Issue. 26,
p.
3292.
Choi, C. -H.
Ai, R.
and
Barnett, S. A.
1992.
Ion-assisted molecular beam epitaxy of GaAs on Si(100).
Journal of Electronic Materials,
Vol. 21,
Issue. 11,
p.
1041.
Uen, W.Y.
and
Nishinaga, T.
1993.
Growth of GaAs on Si by employing AlAs/GaAs double amorphous buffer.
Journal of Crystal Growth,
Vol. 128,
Issue. 1-4,
p.
521.
Okada, Y.
Kawabata, A.
Kawabe, M.
Yui, N.
and
Awanami, H.
1994.
Growth of GaAs and AlGaAs on Si substrates by atomic hydrogen assisted MBE (H-MBE) for solar cell applications.
Vol. 2,
Issue. ,
p.
1701.
Okada, Yoshitaka
Ohta, Shigeru
Kawabata, Akio
Shimomura, Hirofumi
and
Kawabe, Mitsuo
1994.
Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy.
Journal of Electronic Materials,
Vol. 23,
Issue. 3,
p.
331.
Bartels, A.
Peiner, E.
and
Schlachetzki, A.
1995.
The effect of dislocations on the transport properties of III/V-compound semiconductors on Si.
Journal of Applied Physics,
Vol. 78,
Issue. 10,
p.
6141.
Takagi, Yasufumi
Yonezu, Hiroo
Kawai, Takahiro
Hayashida, Keiji
Samonji, Katsuya
Ohshima, Naoki
and
Pak, Kangsa
1995.
Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlattices.
Journal of Crystal Growth,
Vol. 150,
Issue. ,
p.
677.
Okada, Yoshitaka
Harris, James S.
and
Götz, Werner
1996.
Deep level defects in GaAs on Si substrates grown by atomic hydrogen-assisted molecular beam epitaxy.
Journal of Applied Physics,
Vol. 80,
Issue. 8,
p.
4770.
Soga, T.
Kato, T.
Baskar, K.
Shao, C.L.
Jimbo, T.
and
Umeno, M.
1997.
MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cells.
Journal of Crystal Growth,
Vol. 170,
Issue. 1-4,
p.
447.
Sieg, R. M.
Carlin, J. A.
Boeckl, J. J.
Ringel, S. A.
Currie, M. T.
Ting, S. M.
Langdo, T. A.
Taraschi, G.
Fitzgerald, E. A.
and
Keyes, B. M.
1998.
High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates.
Applied Physics Letters,
Vol. 73,
Issue. 21,
p.
3111.
Soga, T.
and
Umeno, M.
1999.
Advances in the Understanding of Crystal Growth Mechanisms.
p.
429.
Luan, Hsin-Chiao
Lim, Desmond R.
Lee, Kevin K.
Chen, Kevin M.
Sandland, Jessica G.
Wada, Kazumi
and
Kimerling, Lionel C.
1999.
High-quality Ge epilayers on Si with low threading-dislocation densities.
Applied Physics Letters,
Vol. 75,
Issue. 19,
p.
2909.
Kakinuma, H
Ueda, T
Gotoh, S
and
Yamagishi, C
1999.
Reduction of threading dislocations in GaAs on Si by the use of intermediate GaAs buffer layers prepared under high V–III ratios.
Journal of Crystal Growth,
Vol. 205,
Issue. 1-2,
p.
25.
Wang, G.
Ogawa, T.
Umeno, M.
Soga, T.
and
Jimbo, T.
2000.
Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3 plasma.
Applied Physics Letters,
Vol. 76,
Issue. 6,
p.
730.