Skip to main content Accessibility help
×
Home

Discussion on microstructure of chemical-vapor-deposited TiN films based on the calculated gaseous concentration distribution in the reactor

  • Noboru Yoshikawa (a1) and Atsushi Kikuchi (a1)

Abstract

TiN films were ehemical-vapor-deposited on the inner wall of a tubular reactor. Films deposited in the upstream region of the reactor consisted of small and sharp crystals with (111)-preferred orientation or random orientation. On the other hand, films deposited in the downstream region or at lower partial pressure of TiCl4 consisted of columnar crystals with (110)-preferred orientation, having polyhedral shapes on the surface. For the films deposited under different conditions at different axial positions, relationships were investigated among the temperature, the calculated concentrations on the substrate, and the degree of preferred orientation of the films. As a result, it was shown that formation of films with (110)-preferred orientation is related to the conditions of high temperature and low partial pressure of TiCl4. Films deposited at the higher gas flow rate had lower degrees of (110)-preferred orientation. Decrease in partial pressure of TiCl4 along the axial direction in the reactor was calculated to be smaller at higher gas flow rate, and provided suitable conditions for deposition of films having small and sharp crystals.

Copyright

References

Hide All
1Yee, K.K., Int. Met. Rev. 1, 19 (1978).
2Lee, H.H., Fundamentals of Microelectronics (McGraw-Hill International Edition, New York, 1990), p. 220.
3Pickering, M.A., Taylor, R.L., Goela, J. S., and Desai, H. D., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T. M., Gallois, B.M., and Warren, J. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), p. 145.
4Vandenbulcke, L. and Vuillard, G., J. Electrochem. Soc. 124 (12), 1937 (1977).
5Lee, W.Y., Lackey, W.J., Agrawal, P.K., and Freeman, G.B., J. Am. Ceram. Soc. 74 (10), 2649 (1991).
6Wahl, G., Chemical Vapour Deposition, Principles and Applications, edited by Hichtman, M.L. and Jensen, K. F. (Academic Press, New York, 1993), p. 591.
7Nakanishi, N., Mori, S., and Kato, E., J. Electochem. Soc. 137 (1), 322 (1990).
8Bryant, W.A., J. Electrochem. Soc. 125 (9), 1534 (1978).
9Moffat, H. and Jensen, K.F., J. Cryst. Growth 77, 108 (1986).
10Coltrin, M.E., Kee, R.J., and Miller, J.A., J. Electrochem. Soc. 133, 1206 (1986).
11Kleijn, C.R., J. Electrochem. Soc. 138 (7), 2190 (1991).
12Desu, S.B. and Kalidindi, S.R., Jpn. J. Appl. Phys. 20 (7), 1310 (1990).
13Hartman, P., Crystal Growth: An Introduction, edited by Hartman, P. (North Holland, Amsterdam, 1993).
14Bryant, W.A., J. Mater. Sci. 12, 1285 (1977).
15Kramer, B. M. and Judd, P. K., J. Vac. Sci. Technol. A3, 2439 (1985).
16Hedge, R.I., Fiordalice, R. E.R.W., Travis, E.O., and Tobin, P.J., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T. M., Gallois, B. M., and Warren, J. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), p. 199.
17Itoh, H., Kato, K., and Sugiyama, K., J. Mater. Sci. 21, 751 (1986).
18Cheng, D.J., Sun, W. P., and Hon, M.H., Thin Solid Films 146, 45 (1987).
19Yoshikawa, N., Higashino, K., and Kikuchi, A., Mater. Trans. JIM 35, 610 (1994).
20Yoshikawa, N. and Kikuchi, A., in Polycrystalline Thin Films—Structure, Texture, Properties and Applications, edited by Barmak, K., Parker, M. A., Floro, J. A., Sinclair, R., and Smith, D. A. (Mater. Res. Soc. Symp. Proc. 343, Pittsburgh, PA, 1994), p. 741.
21Lotgering, F.K., J. Inorg. Nucl. Chem. 9, 113 (1959).

Related content

Powered by UNSILO

Discussion on microstructure of chemical-vapor-deposited TiN films based on the calculated gaseous concentration distribution in the reactor

  • Noboru Yoshikawa (a1) and Atsushi Kikuchi (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.