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Deposition of tin oxide films by pulsed laser evaporation

Published online by Cambridge University Press:  31 January 2011

R. D. Vispute ,
V. P. Godbole ,
S. M. Chaudhari ,
S. M. Kanetkar  and
S. B. Ogale
R. D. Vispute
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
V. P. Godbole
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
S. M. Chaudhari
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
S. M. Kanetkar
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
S. B. Ogale
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
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Abstract

Thin films of SnO2−x (0<x<1) were deposited on Corning glass and alumina substrates by employing a pulsed laser evaporation (PLE) technique. The microstructural features of the films were probed with Sn119 conversion electron Mössbaucr spectroscopy (CEMS) whereas the structural characteristics were identified by using low-angle x-ray diffraction measurements. The electrical and optical properties have also been studied. It is shown that films with conductivity of 3 × 102 (ohm·cm)−1 and transmission of 90% can be obtained by appropriate postannealing of the as-deposited films in air and vacuum. The energy gap of this nearly stoichiometric single-phase SnO2 film was found to be 3.5 eV and spectroscopic ellipsometry measurements indicated the refractive index lobe typically between 1.8–1.9 over the wavelength range of 400–800 nm.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1180 - 1186
Copyright
Copyright © Materials Research Society 1988

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References

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