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Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

  • H. Högberg (a1), J. Birch (a2), M. P. Johansson (a2), L. Hultman (a2) and U. Jansson (a1)...

Abstract

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

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1.Pierson, H.O., Handbook of Refractory Carbides and Nitrides: Properties, Characteristics, Processing and Applications (Noyes, Westwood, NJ, 1996).
2.Barnett, S.A. and Madan, A., Phys. World, 11, 45 (1998).
3.Hultman, L., Engström, C., Birch, J., Johansson, M., Odén, M., Karlsson, L., and Ljungcrantz, H., Z. Metallkd. 90, 10 (1999).
4.Helmersson, U., Todorova, S., Barnett, S.A., Sundgren, J-E., Markert, L.C., Greene, J-E., J. Appl. Phys. 77, 4403 (1995).
5.Yee, K.K., Int. Met. Rev. 1, 19 (1978).
6.He, X-M., Li, W-Z., and Li, H-D., J. Mater. Res. 9, 2355 (1994).
7.Arai, T., Fujita, H., and Oguri, K., Thin Solid Films 165, 139 (1988).
8.Kaloyeros, A., Williams, W.S., and Constant, G., Rev. Sci. Instrum. 59, 1209 (1988).
9.Zhao, Q., Parsons, J., Chen, H., Chadda, A., Wu, J., Kruaval, G., and Downham, D., Mater. Res. Bull. 30, 761 (1995).
10.Norin, L., McGinnis, S., Jansson, U., Carlsson, J-O., J. Vac. Sci. Technol., A 15, 3082 (1997).
11.Norin, L., Lu, J., Malm, J-O., and Jansson, U., J. Mater. Res. 14, 1589 (1999).
12.Norin, L., Högberg, H., Lu, J., Malm, J-O., and Jansson, U., Appl. Phys. Lett. 73, 2754 (1998).
13.Högberg, H., Malm, J-O., Talyzin, A., Norin, L., Lu, J., and Jansson, U. (unpublished).
14.Zetterling, C-M., Östling, M., Norin, L., and Jansson, U., in Widebandgap Semiconductors for High Power, High Frequency and High Temperature, edited by Denbaars, S., Shur, M.S., Palmour, J., and Spencer, M. (Mater. Res. Soc. Proc. 512, Warrendale, PA, 1998), pp. 125130.
15.Lee, S-K., Zetterling, C-M., , M.Östling, Palmquist, J-P., Högberg, H., and Jansson, U., Appl. Phys. Lett. 77, 1478 (2000).
16.Birch, J., Sundgren, J-E., and Fewster, P.F., J. Appl. Phys. 78, 6562 (1995).
17.Fewster, P.F., Crit. Rev. Solid State Mater. Sci. 22, 69 (1997).
18.de Boer, D.K.G., Phys. Rev. B 44, 498 (1991).
19.Johansson, L.I., Johansson, H.I.P., and Håkansson, K.L., Phys. Rev. B 48, 14520 (1993).
20.Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., and Muilenberg, G.E., in Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Eden Prairie, MN, 1979).
21.van der Sluis, P., Mater. Sci. Forum 166–169, 141 (1994).
22.Goldschmidt, H.J., Interstital Alloys (Butterworth, London, United Kingdom, 1967).
23.Högberg, H., Birch, J., Johansson, M.P., Jansson, U., and Hultman, L., J. Cryst. Growth 219, 237 (2000).
24.Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).
25.People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985).
26.van der Merwe, J.H., J. Appl. Phys. 34, 123 (1963).
27.Högberg, H., Malm, J-O., Talyzin, A., Norin, L., Lu, J., and Jansson, U., J. Mater. Res. (accepted).
28.Norin, L. and Jansson, U. (unpublished results).
29.Basir, Y.J. and Andersson, S.L., Int. J. Mass Spectrom. 185–187, 603 (1999).
30.Wiklund, U., Nordin, M., Wänstrand, O., and Larsson, M., Surf. Coat. Technol. (in press).
31.Greene, J.E., in Handbook of Crystal Growth, Fundamental, edited by Hurle, D.T.J. (Elsevier, Amsterdam, The Netherlands, 1993), Vol. 1, p. 639.
32.Tast, F., Malinowski, N., Frank, S., Heinebrodt, M., Billas, I.M.L., and Martin, T.P., Z. Phys. D 40, 351 (1997).
33.Dance, I., J. Am. Chem. Soc. 118, 2699 (1996).

Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

  • H. Högberg (a1), J. Birch (a2), M. P. Johansson (a2), L. Hultman (a2) and U. Jansson (a1)...

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