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Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

  • Cheol Seong Hwang (a1) and Hyeong Joon Kim (a1)


ZrO2 thin films were deposited at 1 atm on Si substrates by oxidation-assisted thermal decomposition of zirconium-trifluoroacetylacetonate in the temperature range of 300–615 °C. Above a deposition temperature of 400 °C, the deposited thin films have a columnar grain structure, where each grain is perpendicular to the substrate surface with a c-axis preferred crystallographic orientation, and have poor electrical characteristics as a dielectric thin film. But the thin film deposited at 350 °C has a fine equiaxed microcrystalline structure and has superior electrical characteristics of a breakdown field of 1 MV/cm and a relative dielectric constant of 27.



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1Fuyuki, T. and Matsunami, H., Jpn. J. Appl. Phys. 25 (9), 12881291 (1986).
2Siefering, K. L. and Griffin, G. L., J. Electrochem. Soc. 137 (4), 814818 (1990).
3Zaima, S., Furuta, T., and Yasuda, Y., J. Electrochem. Soc. 137(4), 12971300 (1990).
4Zaima, S., Furuta, T., Koide, Y., and Yasuda, Y., J. Electrochem. Soc. 137 (9), 28762879 (1990).
5Tauber, R. N., Dumbri, A. C., and Caffrey, R. E., J. Electrochem. Soc. 118 (5), 747754 (1971).
6Balog, M., Schieber, M., Michiman, M., and Patai, S., J. Electrochem. Soc. 126 (7), 12031207 (1979).
7West, G.A. and Beeson, K.W., J. Mater. Res. 5, 15731580 (1990).
8Temple, D. and Reisman, A., J. Electron. Mater. 19 (9), 9951002 (1990).
9Yamaguchi, T., Aoki, S., Sadakata, N., Kohno, O., and Osanai, H., Appl. Phys. Lett. 55 (15), 9, 15811582 (1989).
10Gupta, A., Jagannathan, R., Cooper, E.I., Giess, E.A., Landanan, J.I., and Hussey, B.W., Appl. Phys. Lett. 52 (24), 13, 20772079 (1988).
11Liau, B.Y. and Weppner, W., J. Electrochem. Soc. 138 (8), 24782483 (1991).
12Kao, A.S., J. Appl. Phys. 69 (5), 1, 33093315 (1991).
13Kwok, C.K. and Aita, C.R., J. Vac. Sci. Technol. A 7 (3), 12351239 (1989).
14Kwok, C.K. and Aita, C.R., J. Appl. Phys. 66 (6), 27562758 (1989).
15Morita, M., Fukumoto, H., Imura, T., and Osaka, Y., J. Appl. Phys. 56 (6), 15, 24072409 (1985).
16Hwang, C. S. and Kim, H. J., in Ceramic Transactions, Materials and Processes for Microelectronic Systems, edited by Nair, K. M., Pohanka, R., and Buchanan, R. C. (The American Ceramic Society, Westerville, OH, 1990), Vol. 15, pp. 437456.
17Gilling, L. J., in Crystal Growth of Electronic Materials, edited by Kaldis, E. (North-Holland Physics Publishing Co., Amsterdam, The Netherlands, 1985).
18Handbook of X-ray Photoelectron Spectroscopy, edited by Wagner, C. D., Riggs, W. M., Davis, L. E., Moulder, J. F., and Muilenberg, G. E. (Perkin-Elmer Corporation, Eden Prairie, MN, 1978), pp. 100101.
19Majumdar, D., J. Appl. Phys. 70 (2), 988992 (1991).
20Garvie, R.C., J. Phys. Chem. 69 (4), 12381243 (1965).
21Garvie, R.C., J. Phys. Chem. 82 (2), 218224 (1978).
22Heyne, L., Electrochemistry of Mixed Ionic-Electronic Conductors in Solid Electrolytes, edited by Geiler, S. (Springer-Verlag, Berlin, 1977), pp. 169221.
23Sze, S. M., Semiconductor Devices-Physics and Technology (John Wiley & Sons, New York, 1985), p. 196.

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Deposition and characterization of ZrO2 thin films on silicon substrate by MOCVD

  • Cheol Seong Hwang (a1) and Hyeong Joon Kim (a1)


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