- Cited by 19
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Saenger, K. L. Cabral, C. Clevenger, L. A. Roy, R. A. and Wind, S. 1995. A kinetic study of the C49 to C54 TiSi2conversion using electrical resistivity measurements on single narrow lines. Journal of Applied Physics, Vol. 78, Issue. 12, p. 7040.
Gignac, L. M. Svilan, V. Clevenger, L. A. Cabral, C. and Lavoie, C. 1996. In Situ Tem Analysis of TiSi2 C49-C54 Transformations During Annealing. MRS Proceedings, Vol. 441, Issue. ,
Svilan, V. Rodbell, K. P. Clevenger, L. A. Cabral, C. Roy, R. A. Lavoie, C. Jordan-Sweet, J. and Harper, J. M. E. 1996. Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures. MRS Proceedings, Vol. 427, Issue. ,
Kaplan, W. Mouroux, A. Zhang, S.-L. and Petersson, C.S. 1997. A self-aligned silicide technology with the Mo/Ti bilayer system. Microelectronic Engineering, Vol. 37-38, Issue. , p. 461.
Svilan, V. Rodbell, K.P. Clevenger, L.A. Cabral, C. Roy, R.A. Lavoie, C. Jordan-Sweet, J. and Harper, J. M. E. 1997. Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry. Journal of Electronic Materials, Vol. 26, Issue. 9, p. 1090.
Umapathi, B Das, S Kal, S and Lahiri, S K 1998. Characterization of phase transformation in titanium polycide films. Semiconductor Science and Technology, Vol. 13, Issue. 10, p. 1158.
Boyanov, B. I. Goeller, P. T. Sayers, D. E. and Nemanich, R. J. 1998. Film thickness effects in the Co–Si1−xGex solid phase reaction. Journal of Applied Physics, Vol. 84, Issue. 8, p. 4285.
Gambino, J.P. and Colgan, E.G. 1998. Silicides and ohmic contacts. Materials Chemistry and Physics, Vol. 52, Issue. 2, p. 99.
Tsai, C.J and Yu, K.H 1999. Stress evolution during isochronal annealing of Ni/Si system. Thin Solid Films, Vol. 350, Issue. 1-2, p. 91.
Smith, Paul Martin Bailey, Glenn Hu, Yao Zhi and Tay, Sing Pin 2000. Effect of ramp rate on the C49 to C54 titanium disilicide phase transformation from Ti and Ti(Ta). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue. 4, p. 1949.
Zhang, S.-L. Zhang, Z.-B. Zhu, D.-Z. and Xu, H.-J. 2001. Differences between interfacial and surface molybdenum in the formation of TiSi[sub 2]. Journal of Applied Physics, Vol. 89, Issue. 3, p. 1641.
Lee, Wan Gyu and Lee, Jeong-Gun 2002. Enhancement of TiSi[sub 2] Formation during Rapid Thermal Annealing in N[sub 2] by the Presence of Native Oxide. Journal of The Electrochemical Society, Vol. 149, Issue. 1, p. G1.
Jordan-Sweet, Jean L. Detavernier, Christophe Lavoie, Christian Mooney, Patricia M. and Toney, Michael F. 2005. Applications of synchrotron X-rays in microelectronics industry research. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 241, Issue. 1-4, p. 247.
Wang, W. G. Jordan-sweet, J. Miao, G. X. Ni, C. Rumaiz, A. K. Shah, L. R. Fan, X. Parsons, P. Stearrett, R. Nowak, E. R. Moodera, J. S. and Xiao, J. Q. 2009. In-situ characterization of rapid crystallization of amorphous CoFeB electrodes in CoFeB/MgO/CoFeB junctions during thermal annealing. Applied Physics Letters, Vol. 95, Issue. 24, p. 242501.
Zaima, S. and Nakatsuka, O. 2011. Silicon–Germanium (SiGe) Nanostructures. p. 456.
Washington, J. S. Joseph, E. A. Raoux, S. Jordan-Sweet, J. L. Miller, D. Cheng, H.-Y. Schrott, A. G. Chen, C.-F. Dasaka, R. Shelby, B. Lucovsky, G. Paesler, M. A. Miotti, L. Lung, H.-L. Zhang, Y. and Lam, C. H. 2011. Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5. Journal of Applied Physics, Vol. 109, Issue. 3, p. 034502.
Ahmad, Md. Imteyaz Van Campen, Douglas G. Fields, Jeremy D. Yu, Jiafan Pool, Vanessa L. Parilla, Philip A. Ginley, David S. Van Hest, Maikel F. A. M. and Toney, Michael F. 2015. Rapid thermal processing chamber for in-situ x-ray diffraction. Review of Scientific Instruments, Vol. 86, Issue. 1, p. 013902.
Tapily, K. Consiglio, S. Clark, R. D. Vasić, R. Wajda, C. S. Jordan-Sweet, J. Leusink, G. J. and Diebold, A. C. 2015. Electrical Enhancement and Higher-K Engineering in Ultra-Thin Atomic Layer Deposited Hf1-xAlxOyFilms. ECS Journal of Solid State Science and Technology, Vol. 4, Issue. 2, p. N1.
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We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 μm Salicide (self-aligned silicide) and 0.4 μm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly oriented. Although the preferred oreintation of the initial C49 phase was different in the Salicide and Polycide gate structures, the final orientation of the C54 phase formed was the same. An incomplete conversion of C49 into C54-TiSi2 during the RTA of Polycide gate structures was observed and is attributed to the retarding effects of phosphorus on the transition.
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- ISSN: 0884-2914
- EISSN: 2044-5326
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