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Co+-ion implanted sapphire-annealing in oxidizing atmosphere

Published online by Cambridge University Press:  31 January 2011

Shoji Noda ,
Haruo Doi  and
Osami Kamigaito
Shoji Noda
Affiliation:
Toyota Central Research and Development Labs., Inc., Nagakute-cho, Aichi-gun, Aichi-ken 480-11, Japan
Haruo Doi
Affiliation:
Toyota Central Research and Development Labs., Inc., Nagakute-cho, Aichi-gun, Aichi-ken 480-11, Japan
Osami Kamigaito
Affiliation:
Toyota Central Research and Development Labs., Inc., Nagakute-cho, Aichi-gun, Aichi-ken 480-11, Japan
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Abstract

C-cut sapphire was implanted with 400 keV Co+ ions to doses of 3 × 1017/cm2 and 5 × 1017/cm2 and then annealed in air sequentially at 1273, 1373, and 1473 K. Before and after the annealing, the implanted surfaces were examined by RBS and XRD methods. A nearly homogeneous layer of 350 nm thickness was formed on the surface when sapphire was implanted to a dose of 5 × 1017/cm2 and then annealed at 1473 K. For sapphire implanted to a dose of 3 × 1017/cm2 and then annealed at 1473 K, the implanted layer had a complex structure: the top surface layer of 70 nm thickness was α-alumina with Co3+ ions at the substitutional sites and the near-surface layer (70 nm–300 nm) was a mixed phase of CoAl2O4 and α-alumina.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 3 , June 1989 , pp. 671 - 677
Copyright
Copyright © Materials Research Society 1989

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