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Chemical vapor deposition of α – ZrP whiskers

Published online by Cambridge University Press:  31 January 2011

S. Motojima ,
S. Hirano ,
K. Kurosawa  and
H. Iwanaga
S. Motojima
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
S. Hirano
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
K. Kurosawa
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
H. Iwanaga
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Gifu University, Gifu 501–11, Japan
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Abstract

α–ZrP whiskers have been prepared from ZrCl4 + PCl3 + H2 + Ar gas mixtures at 1050–1250 °C using the mixed metal impurity-activated chemical vapor deposition process. The growth conditions, morphology, growth mechanism, and some properties were examined. The mixed impurities of Si + Pt and Si + Pd were very effective for the ZrP whisker growth with 8–12 mm (avg. 10 mm) long whiskers being obtained at 1300 °C for 1 h. The growth direction of the whiskers having hexagonal and square cross sections were along the c-axis and a-axis, respectively. The whiskers were very stable to an 80 min immersion in a concentrated HCl solution.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 5 , May 1996 , pp. 1157 - 1163
Copyright
Copyright © Materials Research Society 1996

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References

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