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Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

W. L. Zhou ,
F. Namavar ,
P. C. Colter ,
M. Yoganathan ,
M. W. Leksono  and
J. I. Pankove
W. L. Zhou
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106–7204
F. Namavar
Affiliation:
Optoelectronics Department, Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730–2396
P. C. Colter
Affiliation:
Optoelectronics Department, Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730–2396
M. Yoganathan
Affiliation:
Optoelectronics Department, Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730–2396
M. W. Leksono
Affiliation:
Astralux, Inc., 2500 Central Avenue, Boulder, Colorado 80301–2814
J. I. Pankove
Affiliation:
Astralux, Inc., 2500 Central Avenue, Boulder, Colorado 80301–2814
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Abstract

SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001)Ga N||s(111)SiC; [1120]GaN||[110]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN||(001)SiC; [110]GaN||[110]SiC with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both h-GaN and c-GaN are also discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1171 - 1174
Copyright
Copyright © Materials Research Society 1999

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