Skip to main content Accessibility help

Characterization of bond formation in SiC and Si3N4 implanted with Ti, Fe, and Co

  • Didier Zanghi (a1), Agnès Traverse (a1), Sébastien Gautrot (a2) and Odile Kaïtasov (a2)


Ti, Fe, and Co ions were implanted in two ceramics, SiC and Si3N4, to reach concentrations on the order of 10% over a depth of about 50–60 nm. X-ray absorption spectroscopy was performed at the K edge of the implanted ions to identify their local environment at the end of the implantation process. Ti was found to form Ti–C and Ti–N bonds whereas Co and Fe precipitated and formed clusters in Si3N4. CoSi was detected in SiC whereas, in the same matrix, Fe clusters coexist with FeSi. A coherent interpretation of these results is given in terms of the heat of reaction for all possible systems. We also successfully interpret in the same way some results found in literature in the case of implanted oxides.


Corresponding author

a)Address all correspondence to this author. e-mail:


Hide All
1.Muller, A. and Bednorz, J.G., La Recherche 19 (195), 52 (1988).
2.Norton, M.G., J. Adhes. Sci. Technol. 6, 635 (1992).
3.Townsend, P.D., Vacuum 51, 301 (1998);
Kostritskii, S.M. and Moretti, P., Appl. Phys. B68, 801 (1999).
4.Ossi, P.M., Z. Phys. B93, 243 (1994) and references therein.
5.McHargue, C.J., Mater. Sci. Eng. A253, 94 (1998).
6.Treilleux, M. and Chassagne, G., J. Phys. Lett. 40, L161 (1979).
7.Perez, A., Treilleux, M., Thévenard, P., Abouchacra, G., Marest, G., Fritsch, L., and Serughetti, J., in Metastable Materials Formation by Ion Implantation, edited by Picraux, S.T. and Choyke, W.J. (Elsevier, Amsterdam, The Netherlands, 1982).
8.Perez, A., Meaudre, R., Thévenard, P., and Sibut, P., Induced Defects in Insulators, Editions de Physique, Les Ulis, France 1984, p. 171.
9.Perez, A., Treilleux, M., Fritsch, L., and Marest, G., Nucl. Instrum. Methods 182/183, 747 (1981).
10.McHargue, C.J., White, C.W., Sklad, P.S., Perez, A., and Marest, G., J. Mater. Res. 6, 2145 (1991).
11.Borowski, M. and Traverse, A., Nucl. Instrum. Methods B114, 269 (1996).
12.Borowski, M., Traverse, A., and Eymery, J.P., Nucl. Instrum. Methods B122, 247 (1997).
13.Traverse, A., Hyperfine Interact. 110, 159 (1997).
14.Smithells Metals Reference Book, 6th ed., edited by Brandes, E.A. (Butterworths, London, United Kingdom, 1983).
15.Zinkle, S.J., Nucl. Instrum. Methods B91, 234 (1994).
16.Mullica, D.F., Perkins, H.O., Grossie, D.A., Boatner, L.A., and Sales, B.C., J. Solid State Chem. 62, 371 (1986).
17.Bolse, W., Conrad, J., Harbsmeier, F., Borowski, M., and Rödle, T., Mater. Sci. Forum 248–249, 319 (1997).
18.Borowski, M., Bolse, W., and Conrad, J., J. Phys. IV France 7, C2711 (1997).
19.Girardeau, T., Mimault, J., Jaouen, M., Chartier, P., and Tourillon, G., Phys. Rev. B46, 7144 (1992).
20.Chaumont, J., Lalu, F., Salomé, M., and Lamoise, A.M., Nucl. Instrum. Methods 189, 193 (1981).
21.Bernas, H., Chaumont, J., Cottereau, E., Meunier, R., Traverse, A., Clerc, C., Kaitasov, O., Lalu, F., Le Du, D., Moroy, G., and Salomé, M., Nucl. Instrum. Methods B62, 416 (1992).
22.Doolittle, L.R., Nucl. Instrum. Methods B15, 227 (1986).
23.Mimault, J., Faix, J.J., Girardeau, T., Jaouen, M., and Tourillon, G., Meas. Sci. Technol. 5, 482 (1994).
24.Michalowizc, A., Logiciels pour la Chimie, 102, Ed. Société Française de Chimie, Paris (1991).
25.Rehr, J.J., Mustre de Leon, J., Zabinski, S.I., and Albers, R.C.. J. Am. Chem. Soc. 113, 5135 (1991).
26.Chu, Wei-Kan, Mayer, J.W. and Nicolet, M.A.. Backscattering Spectrometry (Academic Press, London, United Kingdom, 1978).
27.Ziegler, J.F., Biersack, J.P., and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon, New York, 1986), Vols. I and II.
28.Borowski, M. and Traverse, A., J. Mater. Res. 10, 3136 (1995).
29.Treilleux, Michel, Doctoral Thesis, Université Claude Bernard, Lyon I, France (1982).
30.Hung, L.S. and Mayer, J.W., Nucl. Instrum. Methods B7/8, 676 (1985).
31.Traverse, A., Le Boité, M.G., and Martin, G., Europhysics. Lett. 8, 633 (1989).
32.Desimoni, J. and Traverse, A., Phys. Rev. B48, 13266 (1993).
33.Cheng, Y.T., Mater. Sci. Rep. 5, 45 (1990).

Characterization of bond formation in SiC and Si3N4 implanted with Ti, Fe, and Co

  • Didier Zanghi (a1), Agnès Traverse (a1), Sébastien Gautrot (a2) and Odile Kaïtasov (a2)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed