Skip to main content Accessibility help

Buried oxide layers formed by low-dose oxygen implantation

  • S. Nakashima (a1) and K. Izumi (a1)


The structure of buried oxide layers formed by low-dose 16O+ implantation of 0.4 and 0.7 × 1018 cm−2 at 180 keV and by subsequent annealing in the temperature range of 1150 to 1350 °C has been investigated using cross-sectional transmission electron microscopy (XTEM). At a dose of 0.4 × 1018 cm−2, an 80-nm continuous uniform buried oxide layer having a breakdown voltage of approximately 40 V is formed after annealing at 1350 °C. At a dose of 0.7 × 1018 cm−2, multiple buried oxide layers having Si islands between them are formed at an anneal temperature of 1150 °C. The number of multiple layers is reduced as the annealing temperature increases, but the Si islands do not dissolve even after annealing at 1350 °C. The existence of the Si islands causes the breakdown voltage to fall to 0 V despite the higher dose.



Hide All
1.Izumi, K., Doken, M., and Ariyoshi, H., Electron. Lett. 14, 593 (1978).
2.Sturm, J. C., in Silicon-on-Insulator and Buried Metals in Semiconductors, edited by Sturm, J. C., Chen, C. K., Pfeiffer, L., and Hemment, P. L. F. (Mater. Res. Soc. Symp. Proc. 107, Pittsburgh, PA, 1988), p. 295.
3.Nakashima, S. and Izumi, K., Electron. Lett. 26 (20), 1647 (1990).
4.Lam, H.W., Pinizzoto, R.F., Yuan, H.T., and Bellavance, D.W., Electron. Lett. 17, 356(1981).
5.White, A.E., Short, K. T., Batstone, J. L., Jacobson, D. C., Poate, J. M., and West, K. W., Appl. Phys. Lett. 50 (1), 19 (1987).
6.Gibbons, J. F., Johnson, W. S., and Mylroi, S.W., Projected Range Statistics (John Wiley and Sons Inc., New York, 1975).
7.Burke, J., The Kinetics of Phase Transformation in Metals (Pergamon Press, New York, 1965).
8.Stoemenos, J., Thin Solid Films 135, 115 (1986).
9.Stoemenos, J., Appl. Phys. Lett. 48 (21), 1470 (1986).
10.Brebec, G., Seguin, R., Sella, C., Bevenot, J., and Martin, C., Acta Metall. 28, 327 (1980).
11.Hemment, P. L. F., Reeson, K. J., Kiler, J. A., Chater, R. J., Marsh, C., Booker, G. R., Celler, G. K., and Stoemenos, J., Vacuum 36 (11/12), 877 (1986).

Buried oxide layers formed by low-dose oxygen implantation

  • S. Nakashima (a1) and K. Izumi (a1)


Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed