Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-21T23:23:52.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Bismuth composition control of SrBi2TaNbO9 thin films by heat treating Bi2O3-inserted heterostructure

Published online by Cambridge University Press:  31 January 2011

Yoon-Baek Park ,
Jeon-Kook Lee ,
Hyung-Jin Jung  and
Jong-Wan Park
Yoon-Baek Park
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
Jeon-Kook Lee*
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
Hyung-Jin Jung
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
Jong-Wan Park
Affiliation:
Department of Metallurgical Engineering, Hanyang University, Seoul 133-791, Korea
*
b) Address all correspondence to this author. e-mail: jkleemc@kistmail.re.kr
Get access

Abstract

Ferroelectric properties of SrBi2TaNbO9 (SBTN) thin films were changed by the amount of Bi content in SBTN. We proposed that the addition of excess Bi to the SBTN thin films could be accomplished by heat treating the SBTN/Bi2O3/SBTN heterostructure fabricated by the radio frequency magnetron sputtering method. The Bi composition was controlled by changing the thickness of the inserted Bi2O3 from 50 to 400Å in the SBTN/Bi2O3/SBTN heterostructure. As the thickness of Bi2O3 films was increased from 0 to 100 Å, the grain grew faster and the ferroelectric properties improved. On the other hand, when the thickness, of Bi2O3 films was thicker than 150 Å, the ferroelectric properties deteriorated. In particular, when a 400 Å Bi2O3 layer was inserted between SBTN films, a Bi2Pt phase appeared and the Bi2O3 films remained between SBTN films, resulting in poor ferroelectric properties. A Bi2Pt phase was formed by the reaction between the platinum bottom electrode and Bi2O3 films. On the other hand, the leakage current density of SBTN thin films decreased with the increase of inserted Bi2O3 film thickness. As the thickness of inserted Bi2O3 films was increased from 0 to 50 Å, leakage current density abruptly decreased because Bi content of the SBTN thin films was increased from 8 mol% deficient to stoichiometric composition. As the thickness of inserted Bi2O3 films increased from 100 to 400 Å, leakage current density gradually decreased because the remaining Bi2O3 layer in SBTN thin films increased.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2986 - 2992
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Dimos, D., Al-Shareef, H.N., Warren, W.L., and Tuttle, B.A., J. Appl. Phys. 80, 1682 (1996).CrossRefGoogle Scholar
2.Amanuma, K., Hase, T., and Miyasaka, Y., Jpn. J. Appl. Phys. 33, 5211 (1994).CrossRefGoogle Scholar
3.Maiwa, H., Ichinose, N., and Okazaki, K., Jpn. J. Appl. Phys. 33, 5240 (1994).CrossRefGoogle Scholar
4.Desu, S.B. and Li, T., Mater. Sci. Eng. B34, L4 (1995).CrossRefGoogle Scholar
5.Desu, S.B. and Vijay, D.P., Mater. Sci. Eng. B32, 83 (1995).CrossRefGoogle Scholar
6.A-Paz de Araujo, C., Cuchiaro, J.D., Mcmiiian, L.D., Scott, M.C., and Scott, J.F., Nature 374, 627 (1995).CrossRefGoogle Scholar
7.Koiwa, I., Okada, Y., Mita, J., Hashimoto, A., and Sawada, Y., Jpn. J. Appl. Phys. 36, 5904 (1997).CrossRefGoogle Scholar
8.Atsuki, T., Soyama, N., Yonnezawa, T., and Ogi, K., Jpn. J. Appl. Phys. 34, 5096 (1995).CrossRefGoogle Scholar
9.Chen, T-C., Li, T., Zhang, X., and Desu, S.B., J. Mater. Res. 12, 1569 (1997).CrossRefGoogle Scholar
10.Chen, T-C., Li, T., Zhang, X., and Desu, S.B., J. Mater. Res. 12, 2165 (1997).CrossRefGoogle Scholar
11.Lee, J-K., Jung, H-J., Auciello, O., and Kingon, A.I., J. Vac. Sci. Technol. A. 14, 900 (1996).CrossRefGoogle Scholar
12.Dat, R., Lee, J-K., Auciello, O., and Kingon, A.I., Appl. Phys. Lett. 67, 572 (1995).CrossRefGoogle Scholar
13.Lee, J-K., Song, T-K., and Jung, H-J., Integrated Ferroelectrics 15, 115 (1997).CrossRefGoogle Scholar
14.Park, Y-B., Lee, J-K., Jung, H-J., and Park, J-W., J. Kor. Phys. Soc. 33, 5152 (1998).Google Scholar
15.Tsai, H-M., Lin, P., and Tseng, T-Y., Appl. Phys. Lett. 72, 1787 (1998).CrossRefGoogle Scholar
16.Matsuki, T., Hayashi, Y., and Kunio, T., presented at the International Electron Devices Meeting (IEDM '96), (1996), p. 691.Google Scholar
17.Rodriguez, M.A., Boyle, T.J., Hernandez, B.A., Buchheit, C.D., and Eatough, M.O., J. Mater. Res. 11, 2282 (1996).CrossRefGoogle Scholar
18.Rodriguez, M.A., Boyle, T.J., Buchheit, C.D., Tissot, R.G., Drewien, C.A., Hernandez, B.A., and Eatough, M.O., Integrated Ferroelectrics 14, 201 (1997).CrossRefGoogle Scholar
19.Oishi, Y., Matsumuro, Y., and Okuyama, M., Jpn. J. Appl. Phys. 36, 5896 (1997).CrossRefGoogle Scholar
20.Wu, W., Fumoto, K., Oishi, Y., Okuyama, M., and Hamakawa, Y., Jpn. J. Appl. Phys. 34, 5141 (1995).CrossRefGoogle Scholar