Skip to main content Accessibility help

Bisethylacetoacetato Cu(II) as a novel metal-organic precursor for Cu film production by plasma-enhanced chemical vapor deposition toward ultra-large-scale integration metallization

  • Soon T. Hwang (a1), Ilwun Shim (a1), Kyung O. Lee (a2), Kyeong S. Kim (a2), Ju H. Kim (a2), Guang J. Choi (a2), Young S. Cho (a2) and Hyungsoo Choi (a3)...


Bisethylacetoacetato Cu(II), referred to as Cu(etac)2, was synthesized and used as a novel metal-organic precursor to produce Cu films by PECVD processing. Cu(etac)2 is a nonfluoride compound that is solid at room temperature with reasonable volatility at 120–150 °C of 0.8 Torr. Effects of selected process variables on the characteristics of Cu film deposition were studied. Considered variables were plasma power, hydrogen flow rate, deposition time, substrate temperature, and precursor temperature. The process conditions to give Cu films of a high quality were determined. The electrical resistivity approached 2 μΩ · cm as the Cu film thickness became greater than 2500 Å. The conformality of the Cu film deposition by PECVD was sufficient to result in complete via-hole fillings of wafers patterned for 256 Mb DRAM.


Corresponding author

a) Address all correspondence to this author.


Hide All
1.Microelectronic Materials and Processes, edited by Levy, R. A. (NATO ASI Series, Kluwer Academic Pub., Netherlands, 1989), pp. 275, 319.
2.Harper, J. M. E., Colgan, E. G., Hu, C-K., Hummel, J.P., Buchwalter, L. P., and Uzoh, C. E., MRS Bull. Aug., 23 (1994).
3.van Hemert, R. L., Spendlove, L. B., and Sievers, R. E., J. Elec-trochem. Soc. 112 (11), 1123 (1965).
4.Jain, A., Chi, K. M., Kodas, T. T., Hampden-Smith, M. J., Kodas, T. T., Farkas, J., Paffett, M. F., and Farr, J.D., SPIE 1596, 23 (1991).
5.Temple, D. and Reisman, A., J. Electrochem. Soc. 136, 3525 (1989).
6.Arita, Y., Mater. Res. Soc. Symp. Proc. 335 (1990).
7.Cohen, S. L., Liehr, M., and Kasi, S., Appl. Phys. Lett. 60 (13), 50 (1992).
8.Fine, S. M., Dyer, P. N., Norman, J. A. T., Muratore, B. A., and Iampietro, R. L., in Chemical Perspectives of Microelectronic Materials II, edited by Interrante, L. V., Jensen, K. F., Dubois, L. H., and Gross, M. E. (Mater. Res. Soc. Symp. Proc. 204, Pittsburgh, PA, 1991), p. 415.
9.Li, H., Eisenbraun, E. T. and Kaloyeros, A. E., J. Vac. Sci. Technol. B 10 (4), 1337 (1992).
10.Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., and Hochberg, A. K., J. Phys. IV 1.C2 271 (1991).
11.Zheng, B., Eisenbraun, E. T., Liu, J., and Kaloyeros, A. E., Appl. Phys. Lett. 61 (18), 2175 (1991).
12.Eisenbraum, E. T., Zheng, B., Dundon, C. P., Ding, P. J., and Kaloyeros, A. E., Appl. Phys. Lett. 60 (25), 3126 (1992).
13.Stumm, T. H. and van den Bergh, H., Mater. Sci. Eng. B23, 48 (1994).
14.Choi, H., Lim, J. C., and Hwang, S. T., A study on the synthesis of metalorganic CVD precursors for thin films in integrated circuits, KIST research report UCN910–4839–6 (1993).
15.Graddon, D. P., J. Inorg. Nucl. Chem. 14, 161 (1960).
16.Perrin, D. D. and Armarego, W. L. F., Purification of Laboratory Chemicals, 3rd ed. (Pergamon Press, New York, 1988), pp. 63, 386.
17.Lecohier, B., Calpini, B., Philippoz, J. M., and van den Bergh, H., J. Electrochem. Soc. 140 (3), 789 (1993).
18.Chemical Vapor Deposition: Principles and Applications, edited by Hitchman, M. L. and Jensen, K. F., 1st ed. (Academic Press, New York, 1993), pp. 31, 90.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed