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Barrierless Cu–Ni–Nb thin films on silicon with high thermal stability and low electrical resistivity– ERRATUM

Published online by Cambridge University Press:  10 January 2014

Abstract

Type
Erratum
Copyright
Copyright © Materials Research Society 2013 

doi: 10.1557/jmr.2013.355, Published by Materials Research Society with Cambridge University Press, 20 December 2013.

In Li et al., the affiliation Key Laboratory of Materials Modification by Laser School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China for Xiao Na Li, Li Rong Zhao, Li Jun Liu, and Chuang Dong is incorrect. It should read: Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China

The publisher regrets the mistake.

References

Li, X.N., Zhao, L.R., Li, Z., Liu, L.J., Bao, C.M., Chu, J.P., and Dong, C.: Barrierless Cu–Ni–Nb thin films on silicon with high thermal stability and low electrical resistivity. J. Mater. Res. 28(24), 33673373 (2013).CrossRefGoogle Scholar
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