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Atomic layer deposition of tungsten disulphide solid lubricant thin films

Published online by Cambridge University Press:  01 December 2004

T.W. Scharf ,
S.V. Prasad ,
T.M. Mayer ,
R.S. Goeke  and
M.T. Dugger
T.W. Scharf
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
S.V. Prasad
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
T.M. Mayer
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
R.S. Goeke
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
M.T. Dugger
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

The synthesis and characterization of crystalline tungsten disulphide (WS2) solid lubricant thin films grown by atomic layer deposition (ALD) using WF6 and H2S gas precursors was studied. A new catalytic route was established to promote nucleation and growth of WS2 films on silicon surfaces with native oxide. Scanning electron microscopy with energy dispersive spectroscopy and Raman spectroscopy were used to determine the film morphology, composition, and crystallinity. The films exhibited solid lubricating behavior with a steady-state friction coefficient of 0.04 in a dry nitrogen environment.

Keywords

Microelectrical mechanical (MEMS)Thin filmTribology
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3443 - 3446
Copyright
Copyright © Materials Research Society 2004

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References

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