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Atmospheric Pressure Chemical Vapor Deposition Growth Window for Undoped Gallium Antimonide

Published online by Cambridge University Press:  31 January 2011

A. Subekti
Affiliation:
Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, New South Wales, 2109, Australia
E. M. Goldys
Affiliation:
Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, New South Wales, 2109, Australia
Melissa J. Paterson
Affiliation:
Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, New South Wales, 2109, Australia
K. Drozdowicz-Tomsia
Affiliation:
Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, New South Wales, 2109, Australia
T. L. Tansley
Affiliation:
Semiconductor Science and Technology Laboratories, Macquarie University, North Ryde, New South Wales, 2109, Australia
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Abstract

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 l/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-1 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

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Articles
Copyright
Copyright © Materials Research Society 1999

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References

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