Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-30T16:35:08.533Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of defect formation in Nb-doped SrTiO3 by impedance spectroscopy

Published online by Cambridge University Press:  31 January 2011

Seong-Ho Kim ,
Jung-Ho Moon ,
Jae-Hwan Park ,
Jae-Gwan Park  and
Yoonho Kim
Seong-Ho Kim
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Jung-Ho Moon
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Jae-Hwan Park
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Jae-Gwan Park
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Yoonho Kim
Affiliation:
Material Science and Engineering Division, Korea Institute of Science and Technology, P.O. Box 131, Seoul, Korea
Get access

Abstract

The thermal activation energies for conduction of Nb-doped SrTiO3 grains and grain boundaries have been investigated by impedance spectroscopy. First, to observe the effect of electrode/SrTiO3 bulk interface, the varied impedances of SrTiO3 single crystal were measured with temperatures. The activation energy of an electrode/bulk interface was determined to be 1.3 eV, whereas that of bulk was 0.8 eV. When the impedances of Nb-doped SrTiO3 ceramics were measured, it was suggested that the more precise impedance values of a single grain and a single grain to grain junction be obtained using a microelectrode method. The activation energies for a grain, a grain boundary, and an electrode/bulk interface were determined to be about 0.8, 1.3, and 1.5 eV, respectively. From these measured results, it was suggested that the activation energy, 0.8 eV, measured in grain was originated from oxygen vacancies and the activation energy, 1.3 eV, in grain boundary was from strontium vacancies.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 1 , January 2001 , pp. 192 - 196
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Waku, S., Rev. Electr. Commun. Lab. 15, 689 (1967).Google Scholar
2.Masuno, K., Murakami, T., and Waku, S., Ferroelectrics 3, 315 (1972).CrossRefGoogle Scholar
3.Burn, I. and Neirman, N., J. Mater. Sci. 17, 3510 (1982).CrossRefGoogle Scholar
4.Fujimoto, M., Chang, Y.M., Roshiko, A., and Kingery, W.D., J. Am. Ceram. Soc. 68, C300 (1985).Google Scholar
5.Yamaoka, N., Am. Ceram. Bull. 65, 1149 (1986).Google Scholar
6.Cross, R., Chaudhari, P., Kawasaki, M., Betchen, M.B., and Gupta, A., Appl. Phys. Lett. 57, 727 (1990).Google Scholar
7.Quincey, P.G., Appl. Phys. Lett. 64, 517 (1994).CrossRefGoogle Scholar
8.Li, H.Q., Ono, R.H., Vale, L.R., Rudman, D.A., and Liou, S.H., Appl. Phys. Lett. 71, 1121 (1997).CrossRefGoogle Scholar
9.Browning, N.D., Buban, J.P., Moltaji, H.O., Pennycock, S.J., Duscher, G., Johnson, K.D., Rodrigues, R.P., and Dravid, V.P., Appl. Phys. Lett. 74, 2683 (1999).CrossRefGoogle Scholar
10.Kim, S.H., Kim, H.T., Park, J.H., and Kim, Y.H., Mater. Res. Bull. 34, 415 (1999).CrossRefGoogle Scholar
11.Neville, R.C. and Mead, C.A., J. Appl. Phys. 43, 4651 (1972).Google Scholar
12.Kawada, T., Iizawa, N., Tomida, M., Kaimai, A., Kawamura, K., Nigara, Y., and Mizusaki, J., J. Eur. Ceram. Soc. 19, 687 (1999).CrossRefGoogle Scholar
13.Chan, N.H., Sharma, R.K., and Smyth, D.M., J. Electrochem. Soc. 128, 1762 (1981).CrossRefGoogle Scholar
14.Cho, S.G. and Johnson, P.F., J. Mater. Sci. 29, 4866 (1994).CrossRefGoogle Scholar
15.Kim, S.H., Seon, H.W., Park, J.G., Park, J.H., and Kim, Y.H., J. Appl. Phys. Jpn. 38, 4818 (1999).CrossRefGoogle Scholar
16.Lewis, G.V. and Catlow, C.R.A., Radiat. Eff. 73, 307 (1983).CrossRefGoogle Scholar
17.Park, H.D. and Payne, D.A. in Grain Boundary Phenomena in Electronic Ceramics, edited by Levinson, M. (Am. Ceram. Soc., Columbus, OH, 1981), p. 242.Google Scholar
18.Franken, P.E.C., Viegers, M.P.A., and Gehring, A.P., J. Am. Ceram. Soc. 64, 687 (1981).CrossRefGoogle Scholar
19.Daniels, J. and Härdtl, K.H., Philips Res. Rep. 31, 489 (1976).Google Scholar
20.Chiang, Y.M. and Takagi, T., J. Am. Ceram. Soc. 73, 3278 (1990).CrossRefGoogle Scholar
21.Koschek, G. and Kubalek, E., Phys. Status Solidi A 79, 131 (1983).CrossRefGoogle Scholar
22.Wu, T.B. and Lin, J.N., J. Am. Ceram. Soc. 77, 759 (1994).CrossRefGoogle Scholar
23.Long, S.A. and Blumenthal, R.N., J. Am. Ceram. Soc. 54, 577 (1971).CrossRefGoogle Scholar
24.Zhi, Y., Chen, A., Vilarinho, P.M., Mantas, P.Q., and Baptista, J.L., J. Eur. Ceram. Soc. 18, 1629 (1998).CrossRefGoogle Scholar