Hostname: page-component-7c8c6479df-ph5wq Total loading time: 0 Render date: 2024-03-28T11:26:03.326Z Has data issue: false hasContentIssue false

An effective Cu-Sn barrier layer for Au bump used in optoelectronic devices

Published online by Cambridge University Press:  03 March 2011

C.Y. Liu*
Affiliation:
Department of Chemical Engineering and Materials Engineering, National Central University, Chung-Li, Taiwan, Republic of China
S.J. Wang
Affiliation:
Department of Chemical Engineering and Materials Engineering, National Central University, Chung-Li, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: chengyi@cc.ncu.edu.tw
Get access

Abstract

By studying reactions between Au foils and Sn(Cu) alloys, we found that the Au consumption rate depended on the Cu-content of the Sn(Cu) solders. The higher Cu-content alloys had faster Au consumption rates. When the Au foil was pre-coated with a Ni layer and then reacted with Sn(Cu) alloys having a Cu-content of morethen 1.5 wt%, a stable ternary (Cu,Ni)6Sn5 compound layer was observed on theAu foil. This ternary compound layer then served as a barrier layer that effectively prevented the Au foil from reacting with the molten solder. This result enabled the implementation of a flip-chip assembly process for the fabrication of optoelectronic devices.

Keywords

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Herrick, J.: Packaging, interconnection, integration of microwave and millimeter waves. IEEE MTT-S International Microwave Symposium, Seattle, WA, June, 2002.Google Scholar
2.Heinrich, W.: Chip-scale packaging for MM-waves using flip-chip and hot-via concepts. IEEE MTT-S International Microwave Symposium, Seattle, June, 2002.Google Scholar
3.Kusamitsu, H., Morishita, Y., Maruhashi, K., Ito, M. andOhata, O.: IEEE Transaction on Electronics Packaging Manufacturing 1, 22 (1999).Google Scholar
4.Humpston, G. andJacobson, D.M.Principles of Soldering and Brazing (ASM International, Materials Park, OH, 1993).Google Scholar
5.Banks, S.: Electronic Packaging & Production 35, 69 (1995).Google Scholar
6.Mae, Z., Kaufmann, M., and Eslambolchi, A.: Proc. 48th IEEE Electron. Comp. Tech. Conf., 1998, p. 952.Google Scholar
7.Mei, Z., Callery, P., Fisher, D., Hua, F., and Glazer, J.: Advances in electronic packaging. In Proceedings of the Pacific Rim/ASME International Intersociety Electronic and Photonic Packaging Conference, 2, 1997, pp. 5431550.Google Scholar
8.Zeng, K., Vuorinen, V. andKivilahti, J.K.: IEEE Transactions on Electronics Packaging Manufacturing 25 162 (2002).CrossRefGoogle Scholar
9.Liu, C.Y. andWang, S.J.: J. Electron. Mater. 32 1303 (2003).Google Scholar
10.Chen, C., Ho, C.E., Lin, A.H. andKao, C.R.: J. Electron. Mater. 29 1200 (2000).CrossRefGoogle Scholar
11.Zeng, K., Vuorinen, V. andKivilahti, J.K.: IEEE Transactions on Electronics Packaging Manufacturing 25 162 (2002).CrossRefGoogle Scholar
12.Steen, H.A.H.Report No. IM-1643, Swedish Institute for Metals Research, 1982.Google Scholar