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Thermal conductivity of AlN ceramic with a very low amount of grain boundary phase at 4 to 1000 K

Published online by Cambridge University Press:  31 January 2011

Koji Watari
Affiliation:
National Institute of Advanced Industrial Science and Technology, Ceramics Research Institute, Moriyama-ku, Nagoya, 463–8560, Japan
Hiromi Nakano
Affiliation:
Electron Microscope Laboratory, Ryukoku University, Seta Otsu, 520–2194, Japan
Kazuyori Urabe
Affiliation:
Department of Materials Chemistry, Ryukoku University, Seta Otsu, 520–2194, Japan
Kozo Ishizaki
Affiliation:
School of Mechanical Engineering, Nagaoka University of Technology, Nagaoka, 940–2188, Japan
Shixun Cao
Affiliation:
Faculty of Engineering, Toyama University, 930–8555, Japan
Katsunori Mori
Affiliation:
Faculty of Engineering, Toyama University, 930–8555, Japan
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Abstract

An AlN ceramic fired at 2173 K for 100 h under a reduced N2 atmosphere with carbon possessed a room-temperature conductivity of 272 Wm−1K−1, slightly lower than the value for high-purity, single-crystal AlN. However, the thermal conductivity of the ceramic at temperatures below 100 K was much lower than that of single crystal. This is mainly due to phonon scattering by grain junctions that possess an amorphous film with a thickness of under 1 nm. At 500 to 1000 K, no significant difference in the conductivity was observed between the ceramic and the single crystal.

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Articles
Copyright
Copyright © Materials Research Society 2002

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References

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