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Thermal conductivity of AlN ceramic with a very low amount of grain boundary phase at 4 to 1000 K

Published online by Cambridge University Press:  31 January 2011

Koji Watari
National Institute of Advanced Industrial Science and Technology, Ceramics Research Institute, Moriyama-ku, Nagoya, 463–8560, Japan
Hiromi Nakano
Electron Microscope Laboratory, Ryukoku University, Seta Otsu, 520–2194, Japan
Kazuyori Urabe
Department of Materials Chemistry, Ryukoku University, Seta Otsu, 520–2194, Japan
Kozo Ishizaki
School of Mechanical Engineering, Nagaoka University of Technology, Nagaoka, 940–2188, Japan
Shixun Cao
Faculty of Engineering, Toyama University, 930–8555, Japan
Katsunori Mori
Faculty of Engineering, Toyama University, 930–8555, Japan
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An AlN ceramic fired at 2173 K for 100 h under a reduced N2 atmosphere with carbon possessed a room-temperature conductivity of 272 Wm−1K−1, slightly lower than the value for high-purity, single-crystal AlN. However, the thermal conductivity of the ceramic at temperatures below 100 K was much lower than that of single crystal. This is mainly due to phonon scattering by grain junctions that possess an amorphous film with a thickness of under 1 nm. At 500 to 1000 K, no significant difference in the conductivity was observed between the ceramic and the single crystal.

Copyright © Materials Research Society 2002

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