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A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Published online by Cambridge University Press:  31 January 2011

Hyoungsub Kim*
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Sangyun Lee
Affiliation:
Display Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
*
a)Address all correspondence to this author. e-mail: hsubkim@skku.edu
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Abstract

This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400∼500 °C) and then the Mo oxide further reacted with IGZO to produce an In–Mo–O compound with some Ga at higher temperatures (600∼700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

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Copyright
Copyright © Materials Research Society 2010

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