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Spectroscopic analysis of tungsten oxide thin films

Published online by Cambridge University Press:  31 January 2011

Felicia S. Manciu*
Department of Physics, University of Texas at El Paso, El Paso, Texas 79968
Jose L. Enriquez
Department of Physics, University of Texas at El Paso, El Paso, Texas 79968
William G. Durrer
Department of Physics, University of Texas at El Paso, El Paso, Texas 79968
Young Yun
Department of Physics, University of Texas at El Paso, El Paso, Texas 79968
Chintalapalle V. Ramana
Department of Mechanical Engineering, University of Texas at El Paso, Texas 79968
Satya K. Gullapalli
Department of Mechanical Engineering, University of Texas at El Paso, Texas 79968
a)Address all correspondence to this author. e-mail:
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We present a detailed study of the morphology and composition of tungsten oxide (WO3) thin films, grown by radio frequency magnetron reactive sputtering at substrate temperatures varied from room temperature (RT) to 500 °C, using infrared (IR) absorption, Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). This work includes valuable new far-IR results about structural changes in microcrystalline WO3. Both IR absorption and Raman techniques reveal an amorphous sample grown at RT and initial crystallization into monoclinic structures for samples grown at temperatures between 100 and 300 °C. The Raman spectra of the samples grown at high temperatures indicate, apart from the monoclinic structure, a strain effect, with a distribution revealed by confocal Raman mapping. XPS indicates that the film surface maintains the stoichiometry WOx, with a value of x slightly greater than 3 at RT due to oxygen contamination, which decreases with increasing temperature.

Copyright © Materials Research Society 2010

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