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Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates

Published online by Cambridge University Press:  10 May 2013


Ju Hyung Lee
Affiliation:
Department of Physics, Yonsei University, Wonju 220-842, Republic of Korea
Jin Chul Choi
Affiliation:
Department of Physics, Yonsei University, Wonju 220-842, Republic of Korea
Hong Seok Lee
Affiliation:
Department of Physics and Research Institute for Basic Sciences, Jeju National University, Jeju 690-756, Republic of Korea
Corresponding
E-mail address:

Abstract

We investigate the size-dependent carrier dynamics and activation energy in cadmium telluride/zinc telluride (CdTe/ZnTe) quantum dots (QDs) grown on silicon (Si) substrates. Photoluminescence (PL) spectra show that the excitonic peak corresponding to transitions from the ground electronic subband to the ground heavy-hole band in CdTe/ZnTe QDs shifts to a lower energy level with increasing CdTe thickness, owing to an increase in the size of the CdTe QDs. Time-resolved PL measurements performed to study the carrier dynamics reveal a longer exciton lifetime for CdTe/ZnTe QDs with increasing CdTe thickness on account of the reduction of the exciton oscillator strength resulting from a strong built-in electric field in the larger QDs. The activation energy of the electrons confined in the CdTe/ZnTe QDs, as obtained from the temperature-dependent PL spectra, increases with increasing CdTe thickness. These results indicate that the carrier dynamics and activation energy of CdTe/ZnTe QDs are affected by the size of the CdTe QDs.


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Copyright
Copyright © Materials Research Society 2013 

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Size-dependent carrier dynamics and activation energy in CdTe/ZnTe quantum dots on Si substrates
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