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P-type doping of Hf0.6Zr0.4NiSn half-Heusler thermoelectric materials prepared by levitation melting and spark plasma sintering

Published online by Cambridge University Press:  11 May 2011

Kai Xiao
Affiliation:
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Tie-Jun Zhu*
Affiliation:
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Cui Yu
Affiliation:
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Sheng-Hui Yang
Affiliation:
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Xin-Bing Zhao
Affiliation:
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
*
a)Address all correspondence to this author. e-mail: zhutj@zju.edu.cn
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Abstract

The Y-doped (Hf0.6Zr0.4)1-xYxNiSn (x = 0, 0.01, 0.02, 0.04, 0.06, 0.1, and 0.2) half-Heusler alloys have been prepared by levitation melting and spark plasma sintering. The effect of Y doping on thermoelectric properties of the alloys was investigated in the temperature range of 300–900 K. Y-doped samples had the lower electrical conductivity compared with the parent compound without Y doping. The thermal conductivity had weak dependence on Y doping content. The absolute values of Seebeck coefficient decreased significantly when x < 0.04. The sign of Seebeck coefficient turned from negative to positive at room temperature for x = 0.04 and 0.1, which means that the hole carriers became dominant in these alloys. However, the alloys changed to n-type conduction again at high temperatures. The maximum figure of merit value of about 0.45 was obtained at 780 K for the undoped sample.

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Articles
Copyright
Copyright © Materials Research Society 2011

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