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Noncontact, in-line measurement of boron concentration from ultrathin boron-doped epitaxial Si1–xGex layers on Si(100) by multiwavelength micro-Raman spectroscopy

Published online by Cambridge University Press:  09 March 2011

Yu Fen Tzeng
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China
Scott Ku
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China
Stock Chang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China
Chi Ming Yang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China
Chyi Shieng Chern
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China
John Lin
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan 300-77, Republic of China
Noriyuki Hasuike
Affiliation:
Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan
Hiroshi Harima
Affiliation:
Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan
Takeshi Ueda
Affiliation:
WaferMasters, Inc., San Jose, California 95112
Toshikazu Ishigaki
Affiliation:
WaferMasters, Inc., San Jose, California 95112
Kitaek Kang
Affiliation:
WaferMasters, Inc., San Jose, California 95112
Woo Sik Yoo*
Affiliation:
WaferMasters, Inc., San Jose, California 95112
*
a)Address all correspondence to this author. e-mail: woosik.yoo@wafermasters.com
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Abstract

The possibility and suitability of micro-Raman spectroscopy as a noncontact, in-line measurement technique for boron (B) concentration in ultrathin (20~35 nm thick) Si1–xGex layers epitaxially grown on 300 mm diameter p-Si(100) wafers, by ultrahigh vacuum chemical vapor deposition, was investigated. Raman spectra from Si1–xGex/Si(100) wafers were measured under 363.8, 457.9, 488.0, and 514.5 nm excitation. Strong correlation was found between B content and characteristics of the Si–Si Raman peak from the Si1–xGex films. As B concentration increased from undoped to 9.1 × 1020 atoms/cm3, the Si–Si Raman peak broadened and the peak height became smaller for a given Ge content. The B concentration in Si1–xGex film estimated from Raman measurement was in good agreement with secondary ion mass spectroscopy analysis results. Boron concentration as low as 8.7 × 1017 atoms/cm3 can be detected by Raman spectroscopy, which is ~30 times more sensitive than the detection limit (2.7 × 1019 atoms/cm3) of high-resolution x-ray diffraction.

Type
Articles
Copyright
Copyright © Materials Research Society 2011

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