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Low-temperature growth and characterization of epitaxial ZnO nanorods by metalorganic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Dong Chan Kim
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea
Bo Hyun Kong
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea
Sung-Yun Jeon
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea
Ji-Beom Yoo
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea
Hyung Koun Cho*
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea
Dong Jun Park
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejon 305-701, Korea
Jeong Yong Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejon 305-701, Korea
*
a)Address all correspondence to this author. e-mail: chohk@skku.edu
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Abstract

By injecting additional argon gas, we were able to grow one-dimensional ZnO nanorod arrays with a uniform distribution on a large scale at a low temperature of less than 330 °C by metalorganic chemical vapor deposition. All of the nanorods grown on the sapphire substrate had a 30° in-plane rotation with respect to the substrate and showed the epitaxial characteristics of [10¯10]ZnO//[11¯20]sapphire, despite the low-temperature growth. These ZnO nanorods with high crystalline quality exhibited a high enhancement factor and low turn-on field value, thus having good potential to be used as a field emitter.

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Copyright
Copyright © Materials Research Society 2007

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References

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