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Investigation of silicon nanoclusters embedded in ZnO matrices deposited by cosputtering system

Published online by Cambridge University Press:  31 January 2011

Li-Wen Lai
Affiliation:
Institute of Microelectronics, Department of Electrical Engineering and Center for Micro/Nano Science and Technology, National Cheng Kung University, 701 Tainan, Taiwan, Republic of China
Chih-Hong Liu
Affiliation:
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, 701 Tainan, Taiwan, Republic of China
Ching-Ting Lee
Affiliation:
Institute of Microelectronics, Department of Electrical Engineering and Center for Micro/Nano Science and Technology, National Cheng Kung University, 701 Tainan, Taiwan, Republic of China
Li-Ren Lou
Affiliation:
Institute of Microelectronics, Department of Electrical Engineering and Center for Micro/Nano Science and Technology, National Cheng Kung University, 701 Tainan, Taiwan, Republic of China
Wen-Yung Yeh
Affiliation:
Optoelectronics Semiconductor and System Application Div., Industrial Technology Research Institute, 310 Hsin Chu, Taiwan, Republic of China
Mu-Tao Chu
Affiliation:
Optoelectronics Semiconductor and System Application Div., Industrial Technology Research Institute, 310 Hsin Chu, Taiwan, Republic of China
Corresponding
E-mail address:
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Abstract

A co-sputtering system was used to deposit silicon nanoclusters embedded in zinc oxide matrix (Si:ZnO) at low temperature without post-annealing. By adjusting the radio frequency power of the Si target during co-sputtering, Si:ZnO films with various crystallographic structures can be obtained. Silicon nanoclusters embedded in the zinc oxide matrix were examined using a high-resolution transmission electron microscope, x-ray diffractometer, and Fourier transformation infrared spectrometry. By comparing with photoluminescence spectra, we can clearly identify quantum confinement effect of silicon nanoclusters embedded in the ZnO matrix.

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Articles
Copyright
Copyright © Materials Research Society 2008

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References

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